参数资料
型号: EDI816256CA
英文描述: 256Kx16 Monolithic SRAM(CMOS,256Kx16单片静态RAM)
中文描述: 256Kx16单片的SRAM(的CMOS,256Kx16单片静态内存)
文件页数: 2/7页
文件大小: 118K
代理商: EDI816256CA
2
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
EDI816256CA
ABSOLUTE MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
NOTE:
Stresses above those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect
device reliability.
Parameter
Unit
Voltage on any pin relative to VSS
-0.5 to 7.0
V
Operating Temperature TA (Ambient)
Commercial
0 to +70
°C
Industrial
-40 to +85
°C
Military
-55 to +125
°C
Storage Temperature, Plastic
-65 to +125
°C
Power Dissipation
1.5
W
Output Current
20
mA
Junction Temperature, TJ
175
°C
Parameter
Sym
Min
Typ
Max
Units
Supply Voltage
VCC
4.5
5.0
5.5
V
Supply Voltage
VSS
000
V
Input High Voltage
VIH
2.2
Vcc +0.5
V
Input Low Voltage
VIL
-0.3
0.8
V
Parameter
Symbol
Condition
Max
Unit
Address Lines
CI
VIN = Vcc or Vss, f = 1.0MHz
12
pF
Data Lines
CD/Q
VIN = Vcc or Vss, f = 1.0MHz
14
pF
These parameters are sampled, not 100% tested.
CAPACITANCE
(TA = +25
°C)
Parameter
Symbol
Conditions
Units
Min
Max
Input Leakage Current
ILI
VIN = 0V to VCC
10
A
Output Leakage Current
ILO
VI/O = 0V to VCC
10
A
Operating Power Supply Current
ICC1
WE, CS = VIL, II/O = OmA, Min Cycle
300
mA
Standby (TTL) Power Supply Current
ICC2
CS
≥ VIH, VIN ≤ VIL, VIN ≥ VIH
60
mA
Full Standby Power Supply Current
ICC3
CS
≥ VCC -0.2V
CA
25
mA
VIN
≥ Vcc -0.2V or VIN ≤ 0.2V
LPA
16
mA
Output Low Voltage
VOL
IOL = 8.0mA
0.4
V
Output High Voltage
VOH
IOH = -4.0mA
2.4
V
NOTE: DC test conditions: VIL = 0.3V, VIH = Vcc -0.3V
DC CHARACTERISTICS
(VCC = 5V, VSS = 0V, TA = -55
°C to +125°C)
Input Pulse Levels
VSS to 3.0V
Input Rise and Fall Times
5ns
Input and Output Timing Levels
1.5V
Output Load
Figure 1
NOTE: For tEHQZ, tGHQZ and tWLQZ, CL = 5pF Figure 2)
30pF
480
Vcc
Q
Figure 1
Figure 2
255
5pF
480
Vcc
Q
255
AC TEST CONDITIONS
TRUTH TABLE
CS
WE
OE
LB
UB
Mode
Data I/O
Supply
I/O1-8
I/O9-16
Current
H
X
Not Select
High Z
ICC2, ICC3
LH
H
X
Output
LX
X
H
Disable
L
H
Data Out
High Z
L
H
L
H
L
Read
High Z
Data Out
ICC1
L
Data Out Data Out
L
H
Data In
High Z
L
X
H
L
Write
High Z
Data In
ICC1
L
Data In
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