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参数资料
| 型号： | EDI88257C |
| 英文描述： | 256Kx8 Monolithic SRAM(256Kx8 CMOS单片静态RAM（存取时间70，85，100ns）) |
| 中文描述： | 256Kx8单片的SRAM（256Kx8的CMOS单片静态随机存储器（存取时间70,85,100纳秒）） |
| 文件页数： | 2/6页 |
| 文件大小： | 187K |
| 代理商： | EDI88257C |
2
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
EDI88257C
ABSOLUTE MAXIMUM RATINGS
Parameter
Unit
Voltage on any pin relative to Vss
-0.5 to 7.0
V
Operating Temperature TA (Ambient)
Industrial
-40 to +85
°C
Military
-55 to +125
°C
Storage Temperature, Ceramic
-65 to +150
°C
Power Dissipation
1
W
Output Current
20
mA
Junction Temperature, TJ
175
°C
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VCC
4.5
5.0
5.5
V
Supply Voltage
VSS
00
0
V
Input High Voltage
VIH
2.2
—
Vcc +0.5
V
Input Low Voltage
VIL
-0.3
—
+0.8
V
Parameter
Symbol
Condition
Max
Unit
Address Lines
CI
VIN = Vcc or Vss, f = 1.0MHz
30
pF
Data Lines
CD/Q
VOUT = Vcc or Vss, f = 1.0MHz
14
pF
These parameters are sampled, not 100% tested.
CAPACITANCE
NOTE:
Stress greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions greater than those indi-
cated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
Input Pulse Levels
VSS to 3.0V
Input Rise and Fall Times
5ns
Input and Output Timing Levels
1.5V
Output Load
Figure 1
NOTE: For tEHQZ, tGHQZ and tWLQZ, CL = 5pF Figure 2)
30pF
480
Vcc
Q
Figure 1
Figure 2
255
5pF
480
Vcc
Q
255
AC TEST CONDITIONS
Parameter
Symbol
Conditions
Units
Min
Typ
Max
Input Leakage Current
ILI
VIN = 0V to VCC
——
±10
A
Output Leakage Current
ILO
VI/O = 0V to VCC
——
±10
A
Operating Power Supply Current
ICC1
W, E = VIL, II/O = 0mA, Min Cycle
(70-100ns)
—
45
75
mA
Standby (TTL) Power Supply Current
ICC2
E
≥ VIH, VIN ≤ VIL, VIN ≥ VIH
—3
10
mA
E
≥ VCC -0.2V
C—
—
5
mA
Full Standby Power Supply Current
ICC3
VIN
≥ Vcc -0.2V or VIN ≤ 0.2V
LP
—
1
mA
Output Low Voltage
VOL
IOL = 2.1mA
—
0.4
V
Output High Voltage
VOH
IOH = -1.0mA
2.4
—
V
DC CHARACTERISTICS
(VCC = 5V, TA = +25
°C)
TRUTH TABLE
G
E
W
Mode
Output
Power
X
H
X
Standby
High Z
Icc2, Icc3
H
L
H
Output Deselect
High Z
Icc1
L
H
Read
Data Out
Icc1
X
L
Write
Data In
Icc1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| EDI88257C/LP-C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SRAM |
| EDI88257C100CB | 制造商:Microsemi Corporation 功能描述:256K X 8 SRAM MONOLITHIC, 5V, 100NS, 32 DIP, TINNED LEADS, M - Bulk |
| EDI88257C100CI | 制造商:Microsemi Corporation 功能描述:256K X 8 SRAM MONOLITHIC, 5V, 100NS, 32 DIP, INDUSTRIAL SCRE - Bulk |
| EDI88257C70CB | 制造商:Microsemi Corporation 功能描述:256K X 8 SRAM MONOLITHIC, 5V, 70NS, 32 DIP, TINNED LEADS, MI - Bulk |
| EDI88257C85CB | 制造商:Microsemi Corporation 功能描述:256K X 8 SRAM MONOLITHIC, 5V, 85NS, 32 DIP, TINNED LEADS, MI - Bulk |
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