参数资料
型号: EDI88257C
英文描述: 256Kx8 Monolithic SRAM(256Kx8 CMOS单片静态RAM(存取时间70,85,100ns))
中文描述: 256Kx8单片的SRAM(256Kx8的CMOS单片静态随机存储器(存取时间70,85,100纳秒))
文件页数: 4/6页
文件大小: 187K
代理商: EDI88257C
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
EDI88257C
A
Q
READ CYCLE 1 (W HIGH; G, E LOW)
tAVQX
tAVQV
tAVAV
DATA 2
ADDRESS 1
ADDRESS 2
DATA 1
A
Q
READ CYCLE 2 (W HIGH)
tAVQV
tELQV
tGLQV
tELQX
tGLQX
tAVAV
tEHQZ
tGHQZ
G
E
WS32K32-XHX
FIG. 2
TIMING WAVEFORM - READ CYCLE
FIG. 4
WRITE CYCLE - E CONTROLLED
FIG. 3
WRITE CYCLE - W CONTROLLED
A
D
WRITE CYCLE 2, E CONTROLLED
tAVEH
tELEH
tEHAX
tDVEH
tEHDX
tAVAV
DATA VALID
HIGH Z
W
tWLEH
E
Q
tAVEL
A
D
WRITE CYCLE 1, W CONTROLLED
tAVWH
tELWH
tWHAX
tWLWH
tDVWH
tWLQZ
tWHQX
tAVWL
tWHDX
tAVAV
DATA VALID
HIGH Z
W
E
Q
相关PDF资料
PDF描述
EDI88512CA-RP 512Kx8 Plastic Monolithic SRAM CMOS(512Kx8 CMOS塑料单片静态RAM)
EDI88512CA 512Kx8 Monolithic SRAM(512Kx8 CMOS单片静态RAM)
EDI88512C 512Kx8 Monolithic SRAM(512Kx8 CMOS单片静态RAM)
EDI8C32128C 128Kx32 SRAM Module(低功耗CMOS,512Kx32静态RAM模块(存取时间15,17,20,25,35,45,55ns))
EDI8C32512CA 512Kx32 SRAM Module(低功耗CMOS,128Kx32静态RAM模块(存取时间15,17,20,25,35,45,55ns))
相关代理商/技术参数
参数描述
EDI88257C/LP-C 制造商:未知厂家 制造商全称:未知厂家 功能描述:SRAM
EDI88257C100CB 制造商:Microsemi Corporation 功能描述:256K X 8 SRAM MONOLITHIC, 5V, 100NS, 32 DIP, TINNED LEADS, M - Bulk
EDI88257C100CI 制造商:Microsemi Corporation 功能描述:256K X 8 SRAM MONOLITHIC, 5V, 100NS, 32 DIP, INDUSTRIAL SCRE - Bulk
EDI88257C70CB 制造商:Microsemi Corporation 功能描述:256K X 8 SRAM MONOLITHIC, 5V, 70NS, 32 DIP, TINNED LEADS, MI - Bulk
EDI88257C85CB 制造商:Microsemi Corporation 功能描述:256K X 8 SRAM MONOLITHIC, 5V, 85NS, 32 DIP, TINNED LEADS, MI - Bulk