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参数资料
| 型号： | EDI88512CA-RP |
| 英文描述： | 512Kx8 Plastic Monolithic SRAM CMOS(512Kx8 CMOS塑料单片静态RAM) |
| 中文描述： | 512Kx8塑料的CMOS单片的SRAM（512Kx8的CMOS塑料单片静态内存） |
| 文件页数： | 1/7页 |
| 文件大小： | 193K |
| 代理商： | EDI88512CA-RP |
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White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
HI-RELIABILITY PRODUCT
EDI88512CA-RP
512Kx8 Plastic Monolithic SRAM CMOS
FEATURES
s 512Kx8 bit CMOS Static
s Random Access Memory
Access Times of 17, 20, 25ns
Data Retention Function (LPA version)
Extended Temperature Testing
Data Retention Functionality Testing
s 36 lead JEDEC Approved Revolutionary Pinout
Plastic SOJ (Package 319)
s Single +5V (
±10%) Supply Operation
TOP VIEW
June 1999 Rev. 5
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
A0
A1
A2
A3
A4
CS
I/O0
I/O1
Vcc
Vss
I/O2
I/O3
WE
A5
A6
A7
A8
A9
NC
A18
A17
A16
A15
OE
I/O7
I/O6
VSS
VCC
I/O5
I/O4
A14
A13
A12
A11
A10
NC
36pin
Revolutionary
WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to
capitalize on the cost advantage of using a plastic component
while not sacrificing all of the reliability available in a full military
device.
Extended temperature testing is performed with the test patterns
developed for use on WEDC’s fully compliant 512Kx8 SRAMs.
WEDC fully characterizes devices to determine the proper test
patterns for testing at temperature extremes. This is critical
because the operating characteristics of device change when it is
operated beyond the commercial guarantee a device that oper-
ates reliably in the field at temperature extremes. Users of
WEDC’s ruggedized plastic benefit from WEDC’s extensive expe-
rience in characterizing SRAMs for use in military systems.
WEDC ensures Low Power devices will retain data in Data Reten-
tion mode by characterizing the devices to determine the appro-
priate test conditions. This is crucial for systems operating at -
40
°C or below and using dense memories such as 512Kx8s.
WEDC’s ruggedized plastic SOJ is footprint compatible with
WEDC’s full military ceramic 36 pin SOJ.
PIN DESCRIPTION
I/O0-7
Data Inputs/Outputs
A0-18
Address Inputs
WE
Write Enables
CS
Chip Selects
OE
Output Enable
VCC
Power (+5V
±10%)
VSS
Ground
NC
Not Connected
BLOCK DIAGRAM
Memory Array
Address
Buffer
Address
Decoder
I/O
Circuits
A-18
I/O-7
WE
CS
OE
FIG. 1
PIN CONFIGURATION
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| EDI8C32128C | 128Kx32 SRAM Module(低功耗CMOS，512Kx32静态RAM模块（存取时间15，17，20，25，35，45，55ns）) |
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| EDI8C32512LPA20EC | Integrated Buffers with VCOM; Temperature Range: -40°C to 85°C; Package: 20-HTSSOP T&R |
相关代理商/技术参数 |
参数描述 |
|---|---|
| EDI88512CATB | 制造商:未知厂家 制造商全称:未知厂家 功能描述:512Kx8 Monolithic SRAM, SMD 5962-95600 |
| EDI88512CATC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:512Kx8 Monolithic SRAM, SMD 5962-95600 |
| EDI88512CATI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:512Kx8 Monolithic SRAM, SMD 5962-95600 |
| EDI88512CATM | 制造商:未知厂家 制造商全称:未知厂家 功能描述:512Kx8 Monolithic SRAM, SMD 5962-95600 |
| EDI88512CAXB32B | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512Kx8 Monolithic SRAM, SMD 5962-95600 |
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