参数资料
型号: EDI88512CA-RP
英文描述: 512Kx8 Plastic Monolithic SRAM CMOS(512Kx8 CMOS塑料单片静态RAM)
中文描述: 512Kx8塑料的CMOS单片的SRAM(512Kx8的CMOS塑料单片静态内存)
文件页数: 5/7页
文件大小: 193K
代理商: EDI88512CA-RP
5
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
EDI88512CA-RP
Characteristic
Sym
Conditions
Min
Typ
Max
Units
Low Power Version only
Data Retention Voltage
VDD
VDD = 2.0V
2
V
Data Retention Quiescent Current
ICCDR
CS
≥ VDD -0.2V
2
mA
Chip Disable to Data Retention Time
TCDR
VIN
≥ VDD -0.2V
0
ns
Operation Recovery Time
TR
or VIN
≤ 0.2V
TAVAV
–ns
DATA RETENTION CHARACTERISTICS (EDI88512LPA ONLY)
(TA = -55
°C to +125°C)
WS32K32-XHX
FIG. 5
DATA RETENTION - CS CONTROLLED
DATA RETENTION, CS CONTROLLED
Data Retention Mode
tR
Vcc
CS
tCDR
CS = VDD -0.2V
VDD
4.5V
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