参数资料
型号: EL7564CMZ-T13
厂商: Intersil
文件页数: 3/17页
文件大小: 0K
描述: IC REG BUCK SYNC ADJ 4A 20SOIC
标准包装: 1,000
类型: 降压(降压)
输出类型: 可调式
输出数: 1
输出电压: 1 V ~ 3.8 V
输入电压: 4.5 V ~ 5.5 V
PWM 型: 电流模式
频率 - 开关: 1MHz
电流 - 输出: 4A
同步整流器:
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 20-SOIC(0.295",7.50mm 宽)
包装: 带卷 (TR)
供应商设备封装: 20-SO
EL7564
Absolute Maximum Ratings (T A = 25°C)
Supply Voltage between V IN or V DD and GND . . . . . . . . . . . . +6.5V
V LX Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V IN +0.3V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . GND -0.3V, V DD +0.3V
V HI Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . GND -0.3V, V LX +6.5V
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Operating Ambient Temperature . . . . . . . . . . . . . . . .-40°C to +85°C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . +135°
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: T J = T C = T A
DC Electrical Specifications
V DD = V IN = 5V, T A = T J = 25°C, C OSC = 1.2nF, Unless Otherwise Specified.
PARAMETER
V REF
DESCRIPTION
Reference Accuracy
CONDITIONS
MIN
1.24
TYP
1.26
MAX
1.28
UNIT
V
V REFTC
Reference Temperature Coefficient
50
ppm/°C
V REFLOAD
V RAMP
Reference Load Regulation
Oscillator Ramp Amplitude
0 < I REF < 50μA
-1
1.15
%
V
I OSC_CHG
I OSC_DIS
Oscillator Charge Current
Oscillator Discharge Current
0.1V < V OSC < 1.25V
0.1V < V OSC < 1.25V
200
8
μA
mA
I VDD +V DRV
IVDD_OFF
V DD_OFF
V DD_ON
V DD +V DRV Supply Current
V DD Standby Current
V DD for Shutdown
V DD for Startup
V EN = 4V, F OSC = 120kHz
EN = 0
2
3.5
4
3.5
1
5
1.5
3.9
4.35
mA
mA
V
V
T OT
T HYS
Over Temperature Threshold
Over Temperature Hysteresis
135
20
°C
°C
I LEAK
I LMAX
Internal FET Leakage Current
Peak Current Limit
EN = 0, L X = 5V (low FET), L X = 0V (high FET)
5
10
μA
A
R DSON
R DSONTC
FET On Resistance
R DSON Tempco
Wafer level test only
30
0.2
60
m ?
m ? /°C
I STP
Auxiliary Supply Tracking Positive
Input Pull Down Current
V STP = V IN / 2
-4
2.5
μA
I STN
V PGP
V PGN
Auxiliary Supply Tracking Negative
Input Pull Up Current
Positive Power Good Threshold
Negative Power Good Threshold
V STN = V IN / 2
With respect to target output voltage
With respect to target output voltage
6
-14
2.5
4
14
-6
μA
%
%
V PG_HI
V PG_LO
V OVP
Power Good Drive High
Power Good Drive Low
Over Voltage Protection
I PG = +1mA
I PG = -1mA
4
10
0.5
V
V
%
V FB
Output Initial Accuracy (EL7564CM) I LOAD = 0A
Output Initial Accuracy
0.960
0.977
0.975
0.992
0.99
1.007
V
V
(EL7564CRE)
V FB_LINE
V FB_LOAD
V FB_TC
Output Line Regulation
Output Load Regulation
Output Temperature Stability
V IN = 5V, ? V IN = 10%, I LOAD = 0A
0.5A < I LOAD < 4A
-40°C < T A < 85°C, I LOAD = 2A
0.5
0.5
±1
%
%
%
I FB
V EN_HI
V EN_LO
Feedback Input Pull Up Current
EN Input High Level
EN Input Low Level
V FB = 0V
1
100
3.2
200
4
nA
V
V
I EN
Enable Pull Up Current
V EN = 0
-4
-2.5
μA
3
FN7297.3
May 9, 2005
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