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参数资料
| 型号： | EMH2408-TL-H |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 20V 4A EMH8 |
| 标准包装： | 3,000 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 45 毫欧 @ 4A，4.5V |
| 闸电荷(Qg) @ Vgs： | 4.7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 345pF @ 10V |
| 功率 - 最大： | 1.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | 8-EMH |
| 包装： | 带卷 (TR) |
Ordering number : ENA1170A
EMH2408
N-Channel Power MOSFET
20V, 4A, 45m Ω , Dual EMH8
Features
http://onsemi.com
?
?
?
The EMH2408 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,
thereby enabling high-density mounting
1.8V drive
Halogen free compliance
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
20
±12
4
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
IDP
PD
PT
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (900mm 2 × 0.8mm) 1unit
When mounted on ceramic substrate (900mm 2 × 0.8mm)
16
1.0
1.2
150
--55 to +150
A
W
W
°C
°C
This product is designed to “ESD immunity < 200V * ”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7045-006
Product & Package Information
? Package : EMH8
? JEITA, JEDEC : -
? Minimum Packing Quantity : 3,000 pcs./reel
8
0.2
5
0.125
EMH2408-TL-H
Packing Type : TL
Marking
LH
TL
Lot No.
1
0.5
4
2.0
1 : Source1
Electrical Connection
2 : Gate1
3 : Source2
8
7
6
5
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
EMH8
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
71112 TKIM/90308PE TIIM TC-00001558 No. A1170-1/7
相关PDF资料 |
PDF描述 |
|---|---|
| EMH2409-TL-H | MOSFET N-CH DUAL 30V 4A EMH8 |
| EMH2411R-TL-H | MOSFET N-CH DUAL 30V 5A EMH8 |
| EMH2412-TL-H | MOSFET N-CH DUAL 24V 6A EMH8 |
| EMH2604-TL-H | MOSFET N/P-CH 20V 4A EMH8 |
| EMH2801-TL-H | MOSFET/SBD P-CH EMH8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| EMH2409 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| EMH2409_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| EMH2409-TL-H | 功能描述:MOSFET PCH+NCH 1.8V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| EMH2411R | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| EMH2411R_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
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