参数资料
型号: EMH2411R-TL-H
厂商: ON Semiconductor
文件页数: 1/7页
文件大小: 0K
描述: MOSFET N-CH DUAL 30V 5A EMH8
标准包装: 3,000
FET 型: 2 N 沟道(双)共漏
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 5A
开态Rds(最大)@ Id, Vgs @ 25° C: 36.5 毫欧 @ 2.5A,4.5V
闸电荷(Qg) @ Vgs: 5.9nC @ 4.5V
功率 - 最大: 1.3W
安装类型: 表面贴装
封装/外壳: 8-SMD,扁平引线
供应商设备封装: 8-EMH
包装: 带卷 (TR)
Ordering number : ENA1421A
EMH2411R
N-Channel Power MOSFET
30V, 5A, 36.5m Ω , Dual EMH8
Features
http://onsemi.com
?
?
?
?
?
?
Low ON-resistance
Best suited for LiB charging and discharging switch
Common-drain type
2.5V drive
Halogen free compliance
Protection diode in
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
30
±12
5
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
IDP
PD
PT
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (900mm 2 × 0.8mm) 1unit
When mounted on ceramic substrate (900mm 2 × 0.8mm)
60
1.3
1.4
150
--55 to +150
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7045-006
Product & Package Information
? Package : EMH8
? JEITA, JEDEC : -
? Minimum Packing Quantity : 3,000 pcs./reel
0.2
0.125
EMH2411R-TL-H
8
5
Packing Type : TL
Marking
LL
1
4
TL
LOT No.
0.5
2.0
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
EMH8
Electrical Connection
8 7 6 5
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/52709PE MS IM TC-00001977 No. A1421-1/7
相关PDF资料
PDF描述
EMH2412-TL-H MOSFET N-CH DUAL 24V 6A EMH8
EMH2604-TL-H MOSFET N/P-CH 20V 4A EMH8
EMH2801-TL-H MOSFET/SBD P-CH EMH8
ENW1-EW07 LAMP INCAND T1.5 NEO WEDGE 14V
ENW1-EW87 LAMP T1-1/2 NEO WEDGE 14V 0.140A
相关代理商/技术参数
参数描述
EMH2412 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications
EMH2412_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
EMH2412-TL-H 功能描述:MOSFET PCH+SBDSWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
EMH25 制造商:ROHM 制造商全称:Rohm 功能描述:General purpose (dual digital transistors)
EMH250PS12 制造商:XP Power 功能描述:POWER SUPPLY AC-DC 12V 21A 制造商:XP Power 功能描述:PSU MEDICAL 250W SINGLE OUTPUT 制造商:XP Power 功能描述:PSU, MEDICAL, 250W, SINGLE OUTPUT 制造商:XP Power 功能描述:AC-DC CONV, OPEN FRAME, 1 O/P, 252W, 21A, 12V; Power Supply Output Type:Adjustable, Fixed; Input Voltage VAC:80V to 275V; No. of Outputs:1; Output Voltage Nom.:12V; Output Current Max:21A; Output Power Max:252W; Applications:Medical ;RoHS Compliant: Yes