参数资料
型号: EMH2411R-TL-H
厂商: ON Semiconductor
文件页数: 7/7页
文件大小: 0K
描述: MOSFET N-CH DUAL 30V 5A EMH8
标准包装: 3,000
FET 型: 2 N 沟道(双)共漏
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 5A
开态Rds(最大)@ Id, Vgs @ 25° C: 36.5 毫欧 @ 2.5A,4.5V
闸电荷(Qg) @ Vgs: 5.9nC @ 4.5V
功率 - 最大: 1.3W
安装类型: 表面贴装
封装/外壳: 8-SMD,扁平引线
供应商设备封装: 8-EMH
包装: 带卷 (TR)
EMH2411R
Note on usage : Since the EMH2411R is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
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application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
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harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
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part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PS No. A1421-7/7
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