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参数资料
| 型号： | EMH2801-TL-H |
| 厂商： | ON Semiconductor |
| 文件页数： | 8/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET/SBD P-CH EMH8 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 85 毫欧 @ 1.5A，4.5V |
| 闸电荷(Qg) @ Vgs： | 4nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 320pF @ 10V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | 8-EMH |
| 包装： | 带卷 (TR) |
EMH2801
Note on usage : Since the EMH2801 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1821-8/8
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