参数资料
型号: ES29BDS400DB-70TGI
厂商: 优先(苏州)半导体有限公司
英文描述: 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述: 的4Mb(512Kx 8/256K × 16),3.0伏的CMOS只,引导扇区闪存
文件页数: 29/51页
文件大小: 697K
代理商: ES29BDS400DB-70TGI
ES I
35
Rev.0B January 5, 2006
ES29LV400E
Excel Semiconductor inc.
Address
OE#
WE#
DQ0-DQ6
CE#
RY/BY#
tRC
Figure 22. Data# Polling Timings (During Embedded Algorithms)
VA
tBUSY
HIGH-Z
Valid Data
tCH
tACC
tCE
tOH
tDF
tOE
tOEH
True
Complement
Status Data
Complement
Status Data
True
Valid Data
HIGH-Z
DQ7
NOTE : VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle
AC CHARACTERISTICS
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