- 您现在的位置：买卖IC网 > PDF目录223750 > ES29BDS400DB-70TGI (优先(苏州)半导体有限公司) 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory PDF资料下载
参数资料
| 型号： | ES29BDS400DB-70TGI |
| 厂商： | 优先(苏州)半导体有限公司 |
| 英文描述： | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 的4Mb（512Kx 8/256K × 16），3.0伏的CMOS只，引导扇区闪存 |
| 文件页数： | 8/51页 |
| 文件大小： | 697K |
| 代理商： | ES29BDS400DB-70TGI |
第1页第2页第3页第4页第5页第6页第7页当前第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页
ES I
16
Rev.0B January 5, 2006
ES29LV400E
Excel Semiconductor inc.
AUTOSELECT COMMAND
The autoselect command sequence allows the host
system to access the manufacturer and device
codes, and determine whether or not a sector is
protected, including information about factory-
locked or customer lockable version.
Table 5 shows the address and data requirements.
This method is an alternative to “A9 high-voltage
method” shown in Table 2, which is intended for
PROM programmers and requires VID on address
pin A9. The autoselect command sequence may be
written to an address within sector that is either in
the read mode or erase-suspend-read mode. The
auto-select command may not be written while the
device is actively programming or erasing. The
autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the autoselect command.
The device then enters the autoselect mode. The
system may read at any address any number of
times without initiating another autoselect com-
mand sequence.
Once after the device enters the auto-select mode,
the manufacture ID code ( 4Ah ) can be accessed
by one of two ways. Just one read cycle ( with A6,
A1 and A0 = 0 ) can be used. Or four consecutive
read cycles ( with A6 = 1 and A1, A0 = 0 ) for con-
tinuation codes (7Fh) and then another last cycle
for the code (4Ah) (with A6, A1 and A0 = 0) can be
used for reading the manufacturer code.
- 4Ah (One-cycle read)
- 7Fh 7Fh 7Fh 7Fh 4Ah (Five-cycle read)
The system must write the reset command to return
to the read mode (or erase-suspend-read mode if
the device was previously in Erase Suspend).
Identifier Code
Address
Data
Manufacturer ID
00h
4Ah
Device ID
01h
B9h(T),
BAh(B)
Sector Protect Verify
(SA)02h
00 / 01
BYTE / WORD PROGRAM
The system may program the device by word or
byte, depending on the state of the BYTE# pin.
Programming is a four-bus-cycle operation. The
program command sequence is initiated by writing
two unlock write cycles, followed by the program
set-up command. The program address and data
are written next, which in turn initiate the Embedded
Program algorithm. The system is not required to
provide further controls or timings. The device auto-
matically provides internally generated program
pulses and verifies the programmed cell margin.
Table 5 shows the address and data requirements
for the byte program command sequence. Note that
the autoselect is unavailable while a programming
operation is in progress.
START
Verify Data?
Increment Address
Write Program Com-
mand Sequence
Data Poll
from System
Last Address?
Yes
Programming
Completed
Embedded
Program
algorithm in
progress
No
Yes
Note: See Table 5 for program command sequence
Figure 6. Program Operation
相关PDF资料 |
PDF描述 |
|---|---|
| ES29BDS400E-90RWCI | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400ET-90RTGI | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400FB-70RWCI | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400FT-70RWCI | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES2BA | 2 A, 100 V, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ES29BDS400DB-80RTG | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400DB-90RTG | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400DT-70WCI | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400E-12RTG | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400E-90RTG | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
发布紧急采购，3分钟左右您将得到回复。