参数资料
型号: ES29BDS400DB-70TGI
厂商: 优先(苏州)半导体有限公司
英文描述: 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述: 的4Mb(512Kx 8/256K × 16),3.0伏的CMOS只,引导扇区闪存
文件页数: 41/51页
文件大小: 697K
代理商: ES29BDS400DB-70TGI
ES I
46
Rev.0B January 5, 2006
ES29LV400E
Excel Semiconductor inc.
ORDERNG INFORMATION
Standard Products
ESI standard products are available in several package and operating ranges. The order number (Valid Combi-
nation) is formed by a combination of the following:
TEMPERATURE RANGE
Blank : Commercial (0oC to + 70oC)
I
:
Industrial (- 40oC to + 85oC)
PACKAGE TYPE
T : Standard TSOP (48-pin), W : FBGA(48-ball)
SPEED OPTION
70 : 70ns
90 : 90ns
SECTOR ARCHITECTURE
Blank : Uniform sector
T
:
Top sector
B
:
Bottom sector
EXCEL SEMICONDUCTOR
COMPONENT GROUP
29 : Flash Memory
TECHNOLOGY
D : 0.18um
E : 0.18um (2nd Gen.)
F : 0.13um
DENSITY & ORGANIZATION
400 : 4M ( x8 / x16)
800 : 8M ( x8 / x16)
160 : 16M ( x8 / x16)
320 : 32M ( x8 / x16)
640 : 64M ( x8 / x16)
POWER SUPPLY AND INTERFACE
F
: 5.0V
LV : 3.0V
DL
: 3.0V, Dual Bank
DS : 1.8V, Dual Bank
BDS : 1.8V, Burst mode, Dual Bank
ES
29
LV
400 X
X - XX
X
Pb-free
C
:
Pb product
G
:
Pb-free product
VOLTAGE RANGE
Blank : 2.7 ~ 3.6V
R
: 3.0 ~ 3.6V
相关PDF资料
PDF描述
ES29BDS400E-90RWCI 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29BDS400ET-90RTGI 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29BDS400FB-70RWCI 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29BDS400FT-70RWCI 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES2BA 2 A, 100 V, SILICON, RECTIFIER DIODE
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参数描述
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ES29BDS400DB-90RTG 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29BDS400DT-70WCI 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
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ES29BDS400E-90RTG 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory