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参数资料
| 型号： | FCA36N60NF |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 34.9A TO3PN |
| 标准包装： | 30 |
| 系列： | SupreMOS®, FRFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 34.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 95 毫欧 @ 18A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 112nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4245pF @ 100V |
| 功率 - 最大： | 312W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-3P-3，SC-65-3 |
| 供应商设备封装： | TO-3PN |
| 包装： | 管件 |
Package Marking and Ordering Information
Part Number
FCA36N60NF
Top Mark
FCA36N60NF
Package
TO-3PN
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Drain to Source Breakdown Voltage
I D = 1 mA, V GS = 0 V,T J = 25 o C
600
-
-
V
Δ BV DSS
/ Δ T J
Breakdown Voltage Temperature
Coefficient
I D = 1 mA, Referenced to
25 o C
-
0.60
-
V/ o C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V DS = 480 V, V GS = 0 V
T J = 125 o C
V GS = ±30 V, V DS = 0 V
-
-
-
-
-
-
10
100
±100
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 18 A
V DS = 20 V, I D = 18 A
3.0
-
-
3.7
80
39
5.0
95
-
V
m Ω
S
Dynamic Characteristics
C iss
C oss
C rss
C oss
C oss eff.
Q g(tot)
Q gs
Q gd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
V DS = 100 V, V GS = 0 V,
f = 1 MHz
V DS = 380 V, V GS = 0 V, f = 1 MHz
V DS = 0 V to 480 V, V GS = 0 V
V DS = 380 V, I D = 18 A,
V GS = 10 V
(Note 4)
f = 1 MHz
-
-
-
-
-
-
-
-
-
3191
145
5
81
338
86
16
36
1.2
4245
195
8
-
-
112
-
-
-
pF
pF
pF
pF
pF
nC
nC
nC
Ω
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 380 V, I D = 18 A,
V GS = 10 V, R G = 4.7 Ω
(Note 4)
-
-
-
-
27
17
92
4
64
44
194
18
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
36
108
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 18 A
V GS = 0 V, I SD = 18 A,
dI F /dt = 100 A/ μ s
-
-
-
-
166
1.3
1.2
-
-
V
ns
μ C
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I AS = 12 A, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ 36 A, di/dt ≤ 1200 A/ μ s, V DD = 380 V, starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2011 Fairchild Semiconductor Corporation
FCA36N60NF Rev. C1
2
www.fairchildsemi.com
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