- 您现在的位置：买卖IC网 > Datasheet目录413 > FCB20N60FTM (Fairchild Semiconductor)MOSFET N-CH 600V 20A D2PAK Datasheet资料下载
参数资料
| 型号： | FCB20N60FTM |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 20A D2PAK |
| 标准包装： | 1 |
| 系列： | SuperFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 190 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 98nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3080pF @ 25V |
| 功率 - 最大： | 208W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 标准包装 |
| 产品目录页面： | 1607 (CN2011-ZH PDF) |
| 其它名称： | FCB20N60FTMDKR |
October 2013
FCB20N60F
N-Channel SuperFET ? FRFET ? MOSFET
600 V, 20 A, 190 m ?
Features
? 650 V @T J = 150 °C
? Typ. R DS(on) = 150 m ?
? Ultra Low Gate Charge (Typ. Q g = 75 nC)
? Low Effective Output Capacitance (Typ. C oss .eff = 165 pF)
? 100% Avalanche Tested
? RoHS Compliant
Applications
Description
SuperFET ? MOSFET is Fairchild Semiconductor ’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications. Super-
FET FRFET ? MOSFET’s optimized body diode reverse recov-
ery performance can remove additional component and
? Lighting
? AC-DC Power Supply
improve system reliability.
? Solar Inverter
D
D
G
S
D 2 -PAK
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwis noted
Symbol
Parameter
FCB20N60FTM
Unit
V DSS
I D
Drain to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
600
20
12.5
V
A
I DM
V GSS
Drain Current
Gate to Source Voltage
- Pulsed
(Note 1)
60
±30
A
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
690
20
20.8
50
208
1.67
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
o C
o C
Thermal Characteristics
Thermal Resistance, Junction to Ambient (1 in pad of 2 oz copper), Max.
Symbol
R ? JC
R ? JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
2
FCB20N60FTM
0.6
62.5
40
Unit
o C/W
?2010 Fairchild Semiconductor Corporation
FCB20N60F Rev. C1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FCB20N60TM | MOSFET N-CH 600V 20A D2PAK |
| FCB36N60NTM | MOSFET N-CH 600V 36A D2PAK |
| FCD4N60TM_WS | MOSFET N-CH 600V 3.9A DPAK |
| FCD5N60TF | MOSFET N-CH 600V 4.6A DPAK |
| FCD7N60TF | MOSFET N-CH 600V 7A DPAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FCB20N60TM | 功能描述:MOSFET HIGH_POWER RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FCB20R22 | 制造商:TE Connectivity 功能描述:RESISTOR 2W 5% 0R22 |
| FCB20R47 | 制造商:TE Connectivity 功能描述:RESISTOR 2W 5% 0R47 |
| FCB2100R | 制造商:TE Connectivity 功能描述:RESISTOR 2W 5% 100R |
| FCB2100RJ | 功能描述:线绕电阻器 - 透孔 FCB2 100R 5% HP RoHS:否 制造商:Bourns 电阻:10 Ohms 容差:5 % 功率额定值:7 W 温度系数:200 PPM / C 系列:FW 端接类型:Axial 工作温度范围:- 55 C to + 155 C 尺寸:9.5 mm Dia. x 26 mm L 封装:Ammo 产品:Power Resistors Wirewound High Energy |
发布紧急采购，3分钟左右您将得到回复。