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参数资料
| 型号： | FCD4N60TM_WS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 3.9A DPAK |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| 系列： | SuperFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.2 欧姆 @ 2A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 16.6nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 540pF @ 25V |
| 功率 - 最大： | 50W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 其它名称： | FCD4N60TM_WSDKR |
October 2013
FCD4N60
N-Channel SuperFET ? MOSFET
600 V, 3.9 A, 1.2 ?
Features
? 650 V @T J = 150 °C
? Typ. R DS(on) = 1.0 ?
? Ultra Low Gate Charge (Typ. Q g = 12.8 nC)
? Low Effective Output Capacitance (Typ. C oss .eff = 32 pF)
? 100% Avalanche Tested
? RoHS Compliant
Applications
Description
SuperFET ? MOSFET is Fairchild Semiconductor ’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
? Lighting
? AC-DC Power Supply
? Solar Inverter
D
D
G
S
D-PAK
G
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted
S
Symbol
Parameter
FCD4N60TM
Unit
V DSS
I D
Drain to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
600
3.9
2.5
V
A
I DM
V GSS
Drain Current
Gate to Source Voltage
- Pulsed
(Note 1)
11.7
±30
A
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
128
3.9
5.0
4.5
50
0.4
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
Thermal Characteristics
Symbol
Parameter
FCD4N60TM
Unit
R ? JC
R ? JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
2.5
83
o
o
C/W
C/W
?2008 Fairchild Semiconductor Corporation
FCD4N60 Rev. C1
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FCD57 | 制造商:Datak Corporation 功能描述: |
| FCD5N60 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET |
| FCD5N60TF | 功能描述:MOSFET 650V SUPERFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FCD5N60TM | 功能描述:MOSFET 650V SUPERFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FCD5N60TM_WS | 功能描述:MOSFET 600V 4.6A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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