参数资料
型号: FCD4N60TM_WS
厂商: Fairchild Semiconductor
文件页数: 7/8页
文件大小: 0K
描述: MOSFET N-CH 600V 3.9A DPAK
产品目录绘图: DPAK, TO-252(AA)
标准包装: 1
系列: SuperFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 600V
电流 - 连续漏极(Id) @ 25° C: 3.9A
开态Rds(最大)@ Id, Vgs @ 25° C: 1.2 欧姆 @ 2A,10V
Id 时的 Vgs(th)(最大): 5V @ 250µA
闸电荷(Qg) @ Vgs: 16.6nC @ 10V
输入电容 (Ciss) @ Vds: 540pF @ 25V
功率 - 最大: 50W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 标准包装
其它名称: FCD4N60TM_WSDKR
Mechanical Dimensions
TO-252 3L (DPAK)
Figure 16. TO252 (D-PAK), Molded, 3 Lead, Option AA&AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor ’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003
Dimension in Millimeters
?2008 Fairchild Semiconductor Corporation
FCD4N60 Rev. C1
7
www.fairchildsemi.com
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