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参数资料
| 型号： | FCD9N60NTM |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 9A DPAK |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| 系列： | SupreMOS™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 385 毫欧 @ 4.5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 17.8nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1000pF @ 100V |
| 功率 - 最大： | 92.6W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FCD9N60NTMDKR |
December 2013
FCD9N60NTM
N-Channel SupreMOS ? MOSFET
600 V, 9 A, 385 m Ω
Features
? R DS(on) = 330 m Ω ( Typ.) @ V GS = 10 V, I D = 4.5 A
? Ultra Low Gate Charge (Typ. Q g = 17.8 nC)
? Low Effective Output Capacitance
? 100% Avalanche Tested
? RoHS Compliant
Description
The SupreMOS ? MOSFET is Fairchild Semiconductor ’s next
generation of high voltage super-junction (SJ) technology
employing a deep trench filling process that differentiates it from
the conventional SJ MOSFETs. This advanced technology and
precise process control provides lowest Rsp on-resistance,
superior switching performance and ruggedness. SupreMOS
MOSFET is suitable for high frequency switching power con-
verter applications such as PFC, server/telecom power, FPD TV
power, ATX power, and industrial power applications.
D
D
G
S
D-PAK
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
(T C = 25 C)
- Derate above 25 o C
C
C
Symbol
V DSS
V GSS
I D
I DM
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current - Pulsed (Note 1)
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt (Note 3)
o
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
FCD9N60N TM
600
±30
9.0
5.7
27
135
9.0
9.3
100
15
92.6
0.74
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/ o C
o
o
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
FCD9N60N TM
1.35
62.5
Unit
o C/W
?2010 Fairchild Semiconductor Corporation
FCD9N60NTM Rev. C0
1
www.fairchildsemi.com
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| FCH35N60 | MOSFET N-CH 600V 35A TO-247 |
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