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参数资料
| 型号： | FCD9N60NTM |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 9A DPAK |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| 系列： | SupreMOS™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 385 毫欧 @ 4.5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 17.8nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1000pF @ 100V |
| 功率 - 最大： | 92.6W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FCD9N60NTMDKR |
Package Marking and Ordering Information
Part Number
FCD9N60NTM
Top Mark
FCD9N60NTM
Package
D-PAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Δ BV DS S
Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 1mA, V GS = 0V, T J = 25 o C
I D = 1mA, Referenced to 25 o C
V DS = 480V, V GS = 0V
V DS = 480V, V GS = 0V, T C = 125 o C
V GS = ±30V, V DS = 0V
600
-
-
-
-
-
0.8
-
-
-
-
-
10
100
±100
V
V/ o C
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10V, I D = 4.5A
V DS = 40V, I D = 4.5A
3.0
-
-
-
0.330
5.3
5.0
0.385
-
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
C oss
C o ss(eff.)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
V DS = 100V, V GS = 0V
f = 1MHz
V DS = 380V, V GS = 0V, f = 1MHz
V DS = 0V to 380V, V GS = 0V
-
-
-
-
-
735
40
3.5
23.7
122
1000
53
5.5
-
-
pF
pF
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 380V, I D = 4.5A
R GEN = 4.7 Ω
(Note 4)
-
-
-
-
13.2
9.6
28.7
11.5
-
-
-
-
ns
ns
ns
ns
Q g(tot)
Q gs
Q gd
ESR
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance(G-S)
V DS = 380V, I D = 4.5A
V GS = 10V
f = 1MHz
(Note 4)
-
-
-
-
17.8
4.2
7.6
2.65
-
-
-
-
nC
nC
nC
Ω
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
9.0
27
-
-
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I SD = 9A
V GS = 0V, I SD = 9A
dI F /dt = 100A/ μ s
-
-
-
-
322
5.04
1.2
-
-
V
ns
μ C
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I AS = 3 A, R G = 25 Ω , starting T J = 25 ° C.
3.I SD ≤ 9 A, di/dt ≤ 200 A/ μ s, V DD ≤ 380 V, starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2010 Fairchild Semiconductor Corporation
FCD9N60NTM Rev. C0
2
www.fairchildsemi.com
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