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| 型号： | FCA47N60_F109 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 47A TO-3P |
| 标准包装： | 30 |
| 系列： | SuperFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 47A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 70 毫欧 @ 23.5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 270nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 8000pF @ 25V |
| 功率 - 最大： | 417W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-3P-3，SC-65-3 |
| 供应商设备封装： | TO-3PN |
| 包装： | 管件 |
| 其它名称： | FCA47N60_F109-ND FCA47N60_F109FS |
December 2013
FCA47N60 / FCA47N60_F109
N-Channel SuperFET ? MOSFET
600 V, 47 A, 70 m Ω
Features
? 650 V @ T J = 150°C
? Typ. R DS(on) = 58 m Ω
? Ultra Low Gate Charge (Typ. Q g = 210 nC)
? Low Effective Output Capacitance (Typ. C oss(eff.) = 420 pF)
? 100% Avalanche Tested
Application
Description
SuperFET ? MOSFET is Fairchild Semiconductor ’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
? Solar Invertor
? AC-DC Power Supply
D
G
D
S
TO-3PN
G
S
Absolute Maximum Ratings
Symbol
V DSS
Drain-Source Voltage
Parameter
FCA47N60
FCA47N60_F109
600
Unit
V
I D
Drain Current
- Continuous (T C = 25 ° C)
- Continuous (T C = 100 ° C)
47
29.7
A
A
I DM
V GSS
E AS
I AR
E AR
dv/dt
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
141
± 30
1800
47
41.7
4.5
A
V
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 ° C)
- Derate above 25 ° C
417
3.33
W
W/ ° C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
° C
° C
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
Typ.
--
--
Max.
0.3
41.7
Unit
° C/W
° C/W
?2010 Fairchild Semiconductor Corporation
FCA47N60 / FCA47N60_F109 Rev. C2
1
www.fairchildsemi.com
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