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参数资料
| 型号： | FCA47N60_F109 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 47A TO-3P |
| 标准包装： | 30 |
| 系列： | SuperFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 47A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 70 毫欧 @ 23.5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 270nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 8000pF @ 25V |
| 功率 - 最大： | 417W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-3P-3，SC-65-3 |
| 供应商设备封装： | TO-3PN |
| 包装： | 管件 |
| 其它名称： | FCA47N60_F109-ND FCA47N60_F109FS |
Package Marking and Ordering Information
Device Marking
FCA47N60
FCA47N60
Device
FCA47N60
FCA47N60_F109
Package
TO-3PN
TO-3PN
Reel Size
-
-
Tape Width
-
-
Quantity
30
30
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Δ BV DSS
/ Δ T J
BV DS
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A, T J = 25 ° C
V GS = 0 V, I D = 250 μ A, T J = 150 ° C
I D = 250 μ A, Referenced to 25 ° C
V GS = 0 V, I D = 47 A
V DS = 600 V, V GS = 0 V
V DS = 480 V, T C = 125 ° C
V GS = 30 V, V DS = 0 V
V GS = -30 V, V DS = 0 V
600
--
--
--
--
--
--
--
--
650
0.6
700
--
--
--
--
--
--
--
--
1
10
100
-100
V
V
V/ ° C
V
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
g FS
V GS(th)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Gate Threshold Voltage
V DS = V GS , I D = 250 μ A
V GS = 10 V, I D = 23.5 A
V DS = 40 V, I D = 23.5 A
V DS = V GS , I D = 250 μ A
3.0
--
--
3.0
--
0.058
40
--
5.0
0.07
--
5.0
Dynamic Characteristics
C iss
C oss
C rss
C oss
C oss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
V DS = 480 V, V GS = 0 V, f = 1.0 MHz
V DS = 0 V to 400 V, V GS = 0 V
--
--
--
--
--
5900
3200
250
160
420
8000
4200
--
--
--
pF
pF
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 300 V, I D = 47 A
R G = 25 Ω
(Note 4)
--
--
--
--
185
210
520
75
430
450
1100
160
ns
ns
ns
ns
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DS = 480 V, I D = 47 A
V GS = 10 V
(Note 4)
--
--
--
210
38
110
270
--
--
nC
nC
nC
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
47
141
A
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0 V, I S = 47 A
--
--
1.4
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 47 A
dI F /dt =100 A/ μ s
(Note 4)
--
--
590
25
--
--
ns
μ C
Notes:
1. Repetitive Rating: Pulse-width limited by maximum junction temperature.
2. I AS = 18 A, R G = 25 Ω , starting T J = 25°C
3. I SD ≤ 47 A, di/dt ≤ 200 A/ μ s, V DD = 380 V, starting T J = 25°C
4. Essentially independent of operating temperature typical characteristics.
?2010 Fairchild Semiconductor Corporation
FCA47N60 / FCA47N60_F109 Rev. C2
2
www.fairchildsemi.com
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