参数资料
型号: FCH76N60NF
厂商: Fairchild Semiconductor
文件页数: 4/8页
文件大小: 0K
描述: MOSFET N-CH 600V 72.8A TO247-3
标准包装: 150
系列: SupreMOS™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 600V
电流 - 连续漏极(Id) @ 25° C: 72.8A
开态Rds(最大)@ Id, Vgs @ 25° C: 38 毫欧 @ 38A,10V
Id 时的 Vgs(th)(最大): 5V @ 250µA
闸电荷(Qg) @ Vgs: 300nC @ 10V
输入电容 (Ciss) @ Vds: 11045pF @ 100V
功率 - 最大: 543W
安装类型: 通孔
封装/外壳: TO-247-3
供应商设备封装: TO-247
包装: 管件
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
1.1
2.0
1.0
1.5
1.0
0.9
T J , Junction Temperature [ C ]
T J , Junction Temperature [ C ]
0.8
-100
*Notes:
1. V GS = 0V
2. I D = 250 μ A
-50 0 50 100 150 200
o
0.5
0.0
-100
*Notes:
1. V GS = 10V
2. I D = 38A
-50 0 50 100 150 200
o
Figure 9. Maximum Safe Operating Area
1000
Figure 10. Maximum Drain Current
vs. Case Temperature
80
1. T C = 25 C
2. T J = 150 C
100
10
1
0.1
Operation in This Area
is Limited by R DS(on)
30 μ s
100 μ s
1ms
10ms
DC
*Notes:
o
o
3. Single Pulse
60
40
20
T C , Case Temperature [ C ]
0.01
1
10 100
V DS , Drain-Source Voltage [V]
1000
0
25
50 75 100 125
o
150
Figure 11. Transient Thermal Response Curve
0.3
0.1
0.5
0.2
0.1
P DM
0.01
0.05
t 1
t 2
1. Z θ JC (t) = 0.23 C/W Max.
0.02
0.01
Single pulse
*Notes:
o
2. Duty Factor, D = t 1 /t 2
10
10
10
10
10
10
10
1E-3
-5
-4
-3
-2
3. T JM - T C = P DM * Z θ JC (t)
-1 0
1
1 ,
t Rectangular Pulse Duration [sec]
?2011 Fairchild Semiconductor Corporation
FCH76N60NF Rev. C1
4
www.fairchildsemi.com
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