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参数资料
| 型号： | FDA38N30 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 300V TO-3 |
| 标准包装： | 30 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 300V |
| 电流 - 连续漏极(Id) @ 25° C： | 38A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 85 毫欧 @ 19A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 60nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2600pF @ 25V |
| 功率 - 最大： | 312W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-3P-3，SC-65-3 |
| 供应商设备封装： | TO-3PN |
| 包装： | 管件 |
November 2013
FDA38N30
N-Channel UniFET TM MOSFET
300 V, 38 A, 85 m Ω
Features
? R DS(on) = 70 m Ω (Typ.) @ V GS = 10 V, I D = 19 A
? Low Gate Charge (Typ. 60 nC)
? Low C rss (Typ. 60 pF)
? 100% Avalanche Tested
? ESD Improved Capability
? RoHS Compliant
Description
UniFET TM MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
Applications
? PDP TV
? Uninterruptible Power Supply
? AC-DC Power Supply
D
G
G
D
S
TO-3PN
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FDA38N30
300
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
±30
38
22
V
A
I DM
Drain Current
- Pulsed
(Note 1)
150
A
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1200
38
31
4.5
312
2.5
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDA38N30
0.4
40
Unit
o C/W
?2011 Fairchild Semiconductor Corporation
FDA38N30 Rev. C1
1
www.fairchildsemi.com
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| FDA59N30 | MOSFET N-CH 300V 59A TO-3P |
| FDA69N25 | MOSFET N-CH 250V 69A TO-3P |
| FDA70N20 | MOSFET N-CH 200V 70A TO-3P |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDA4100LV | 制造商:STMicroelectronics 功能描述:ABD AUDIO & POWER - Trays |
| F-DA50A | 制造商:Cosel Usa Inc 功能描述:POWER SUPPLY; DAS SERIES HEAT SINK 制造商:Cosel Usa Inc 功能描述:Optional Accessories, OP Series |
| F-DA50B | 制造商:Cosel Usa Inc 功能描述:Optional Accessories, OP Series |
| F-DA50C | 制造商:Cosel Usa Inc 功能描述:Optional Accessories, OP Series |
| F-DA50D | 制造商:Cosel Usa Inc 功能描述:Optional Accessories, OP Series |
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