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| 型号： | FDB3860 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 6.4A D2PAK |
| 产品变化通告： | Product Discontinuation 27/Feb/2012 |
| 产品目录绘图： | D2PAK, TO-263AB Pkg |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 37 毫欧 @ 5.9A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1740pF @ 50V |
| 功率 - 最大： | 3.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 标准包装 |
| 其它名称： | FDB3860DKR |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0 V
I D = 250 μ A, referenced to 25 °C
V DS = 80 V, V GS = 0 V
V GS = ±20 V, V DS = 0 V
100
104
1
±100
V
mV / °C
μ A
nA
On Characteristics
V GS(th)
? V GS(th)
? T J
r DS(on)
g FS
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25 °C
V GS = 10 V, I D = 5.9 A
V GS = 10 V, I D = 5.9 A, T J = 125 °C
V DS = 10 V, I D = 5.9 A
2.5
3.8
-11
31
56
18
4.5
37
67
V
mV/°C
m ?
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 50 V, V GS = 0 V,
f = 1 MHz
1310
100
40
1.7
1740
130
65
pF
pF
pF
?
Switching Characteristics
t d(on)
Turn-On Delay Time
12
22
ns
t r
t d(off)
t f
Q g
Q gs
Q gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10 V
Gate to Source Charge
Gate to Drain “Miller” Charge
V DD = 50 V, I D = 5.9 A,
V GS = 10 V, R GEN = 6 ?
V DD = 50 V, I D = 5.9 A
6
17
3
21
6.9
5.4
12
31
10
30
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
V SD
Source to Drain Diode Forward Voltage
V GS = 0 V, I S = 2.0 A
V GS = 0 V, I S = 5.9 A
(Note 2)
(Note 2)
0.7
0.8
1.2
1.3
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 5.9 A, di/dt = 100 A/ μ s
35
37
56
60
ns
nC
Notes :
1: R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R θ JC is guaranteed by design while R θ JA is determined by the user’s board design.
a . 40 °C/W when mounted on a 1 in 2 pad of 2 oz copper
b . 62.5 °C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width < 30 0 μ s, Duty cycle < 2.0%.
3: Starting T J = 25 ° C , L = 3 mH , I AS = 8 A , V DD = 100 V , V GS = 10 V.
?2009 Fairchild Semiconductor Corporation
FDB3860 Rev . C
2
www.fairchildsemi.com
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