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参数资料
| 型号： | FDB7045L |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 75 A, 30 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | TO-263AB, 3 PIN |
| 文件页数： | 2/10页 |
| 文件大小： | 428K |
| 代理商： | FDB7045L |
Electrical Characteristics
T
C
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
V
GS
= 0 V, I
D
= 250
μ
A
30
V
BV
DSS
T
J
I
DSS
I
GSSF
I
D
= 250
μ
A, Referenced to 25
°
C
22
mV/
°
C
V
DS
= 24 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
1
μ
A
nA
100
I
GSSR
V
GS
= -20 V, V
DS
= 0 V
-100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= -250
μ
A, Referenced to 25
°
C
1
1.5
-5
3
V
Gate Threshold Voltage
mV/
°
C
V
GS
= 10 V, I
D
= 50 A,
V
GS
= 10 V, I
D
= 50 A, T
J
=125
°
C
V
GS
= 4.5 V,I
D
= 40 A
V
GS
= 10 V, V
DS
= 10 V
V
DS
= 5 V, I
D
= 50 A
0.0039
0.0056
0.0048
0.0045
0.0070
0.0060
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
50
A
S
120
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
5400
1170
530
pF
pF
pF
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
14
114
105
115
50
16
16
30
160
150
160
70
ns
ns
ns
ns
nC
nC
nC
V
DD
= 15 V, I
D
= 50 A,
V
GS
= 10 V
V
DS
= 15 V,
I
D
= 50 A, V
GS
= 5 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
(Note 2)
V
SD
Drain-Source Diode Forward
Voltage
75
1.2
A
V
V
= 0 V, I = 50 A
(Note 2)
0.95
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