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参数资料
| 型号： | FDB7045L |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 75 A, 30 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | TO-263AB, 3 PIN |
| 文件页数： | 5/10页 |
| 文件大小： | 428K |
| 代理商： | FDB7045L |
TO-220 Tape and Reel Data and Package Dimensions
August 1999, Rev. B
0.165
TO-220 Tube Packing
Configuration:
Figure 1.0
Note/Comments
Packaging Option
TO-220 Packaging Information
Standard
(no
flow code)
Rail/Tube
Packaging type
Qty per Tube/Box
45
Box Dimension (mm)
530x130x83
Max qty per Box
1,080
Weight per unit (gm)
1.4378
S62Z
BULK
300
114x102x51
1,500
1.4378
FSCINT Label
FSCINT Label
114mm x 102mm x 51mm
EO70 Immediate Box
530mm x 130mm x 83mm
Intermediate box
300 units per
EO70 box
5 EO70 boxes per per
Intermediate Box
1500 units maximum
quantity per intermediate box
Anti-static
Bubbl e Sheets
45 units per Tube
Conduct ive Plastic Bag
1080 units maximum
quantity per box
530mm x 130mm x 83mm
Intermediate box
FSCINT Label
12 Tubes per Bag
Note: All dim ensions are in inches
F
9852
N9852
F
9852
N9852
N9852
9852
N9852
N9852
N9852
F
9852
F
9852
N9852
1.300
±
.015
0.080
0.032
±
.003
0.275
0.275
0.160
0.800
0.450
±
.030
20.000
+0.031
-0.065
0.123
+0.001
-0.003
LOT:
CBVK741B019
NSID:
FDP7060
D/C1:
D9842
SPEC REV:
B2
QA REV:
SPEC:
QTY:
1080
FAIRCHILD SEMICONDUCTOR CORPORATION
HTB:B
(FSCINT)
FSCINT Label sample
TO-220 Tube
Configuration:
Figure 4.0
TO-220 Packaging
Information:
Figure 2.0
TO-220 bulk Packing
Configuration:
Figure 3.0
2 bags per Box
Packaging Description:
TO-220 parts are shipped normally in tube. The tube is
made of PVC plastic treated with anti-static agent.These
tubes in standard option are placed inside a dissipative
plastic bag, barcode labeled, and placed inside a box
made of recyclable corrugated paper. One box contains
two bags maximum (see fig. 1.0). And one or several of
these boxes are placed inside a labeled shipping box
which comes in different sizes depending on the number
of parts shipped. The other option comes in bulk as
described in the Packaging Information table. The units in
this option are placed inside a small box laid with anti-
static bubble sheet. These smaller boxes are individually
labeled and placed inside a larger box (see fig. 3.0).
These larger or intermediate boxes then will be placed
finally inside a labeled shipping box which still comes in
different sizes depending on the number of units shipped.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDB7045L_Q | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FD-B8 | 制造商:SUNX 功能描述:FIBRE REFLECTIVE M6 2M 制造商:Panasonic Electric Works 功能描述:Slim Body Analog Fiber Sensor 2-Pin |
| FD-B8 | 制造商:Panasonic Electric Works 功能描述:FIBER SENSORM6 DIF. LONG SENSING RANGE |
| FDB8030L | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDB8132 | 功能描述:MOSFET N-CH 30V 80A D2PAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:* 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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