- 您现在的位置：买卖IC网 > Datasheet目录415 > FDB8896 (Fairchild Semiconductor)MOSFET N-CH 30V 93A TO-263AB Datasheet资料下载
参数资料
| 型号： | FDB8896 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 93A TO-263AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 93A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5.7 毫欧 @ 35A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 67nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2525pF @ 15V |
| 功率 - 最大： | 80W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263AB |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FDB8896DKR |
Typical Characteristics T C = 25 ° C unless otherwise noted
1000
500
If R = 0
100
10 μ s
100
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
10
1
0.1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(ON)
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
100 μ s
1ms
10ms
DC
10
1
STARTING T J = 25 o C
STARTING T J = 150 o C
1
10
60
0.01
0.1
1
10
100
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
160
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 15V
160
V GS = 10 V
V GS = 5V
120
80
T J =
25 o C
120
80
V GS = 4V
V GS = 3V
40
40
T C = 25 o C
T J =
175 o C
T J = -55 o C
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
0
1.5
2.0
2.5
3.0
3.5
4
0
0
0.25
0.5
0.75
1.0
1.25
1.5
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
14
I D = 35A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.6
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
12
10
8
1.4
1.2
1.0
6
I D = 1A
0.8
4
0.6
V GS = 10V, I D = 35A
2
4
6
8
10
-80
-40
0 40 80 120
160
200
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
?200 8 Fairchild Semiconductor Corporation
T J , JUNCTION TEMPERATURE ( o C)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDB8896 Rev. B 2
相关PDF资料 |
PDF描述 |
|---|---|
| FDC2512_F095 | MOSFET N-CH 150V 1.4A 6-SSOT |
| FDC2612_F095 | MOSFET N-CH 200V 1.1A 6-SSOT |
| FDC3512_F095 | MOSFET N-CH 80V 3A 6-SSOT |
| FDC3535 | MOSFET P-CH 80V 6-SSOT |
| FDC3601N | MOSFET N-CH DUAL 100V SSOT-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDB8896_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDB8896_F085 | 功能描述:MOSFET 30V N-CHAN PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDB9403 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Power Trench?? MOSFET 40V, 110A, 1.2m?? |
| FDB9403_F085 | 功能描述:MOSFET 40V 110A 1.2m? N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDB9406_F085 | 功能描述:MOSFET 40V, 110A, 1.8m Ohm NChannel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。