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| 型号： | FDC610PZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 4.9A SSOT-6 |
| 产品变化通告： | Mold Compound Change 08/April/2008 |
| 产品目录绘图： | MOSFET SuperSOT-6 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 42 毫欧 @ 4.9A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 24nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1005pF @ 15V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDC610PZDKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DS S
? T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = –250 μ A, V GS = 0V
I D = –250 μ A, referenced to 25°C
V DS = –24V, V GS = 0V
V GS = ±25V, V DS = 0V
–30
–22
–1
±10
V
mV /° C
μ A
μ A
On Characteristics
V GS(th)
? V GS(t h)
? T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = –250 μ A
I D = –250 μ A, referenced to 25°C
–1
–2.2
6
–3
V
mV/°C
V GS = –10V, I D = –4.9A
36
42
r DS(on)
Static Drain to Source On Resistance
V GS = –4.5V, I D = –3.7A
58
75
m ?
V GS = –10V, I D = –4.9A, T J = 125°C
50
60
g FS
Forward Transconductance
V DD = –10V, I D = –4.9A
15
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = –15V, V GS = 0V,
f = 1MHz
f = 1MHz
755
145
125
13
1005
195
190
pF
pF
pF
?
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
V DD = –15V, I D = –4.9A
V GS = –10V, R GEN = 6 ?
V GS = 0V to –10V
7
4
33
23
17
14
10
53
37
24
ns
ns
ns
ns
nC
Q g
Q gs
Total Gate Charge
Gate to Source Gate Charge
V GS = 0V to –4.5V
V DD = –15V,
I D = –4.9A
9
2.9
13
nC
nC
Q gd
Gate to Drain “Miller” Charge
4.3
nC
Drain-Source Diode Characteristics
I S
Maximum Continuous Drain-Source Diode Forward Current
–1.3
A
V SD
Source to Drain Diode Forward Voltage V GS = 0V, I S = –1.3A
(Note 2)
–0.8
–1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = –4.9A, di/dt = 100A/ μ s
19
9
35
18
ns
nC
Notes:
1. R θ JA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 30 0 μ s, Duty cycle < 2.0%.
a. 78°C/W when mounted on a
1 in 2 pad of 2 oz copper.
b. 156°C/W when mounted on a
minimum pad of 2 oz copper.
FDC610PZ Rev . B
2
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDC610PZ | 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL MOSFET -30V 4.9mA |
| FDC610PZ_G | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR |
| FDC6301 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel , Digital FET |
| FDC6301N | 功能描述:MOSFET SSOT-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC6301N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET NN CH 25V 0.22A SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NN CH, 25V, 0.22A, SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NN CH, 25V, 0.22A, SSOT6; Transistor Polarity:N Channel; Continuous Drain Current Id:220mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:850mV ;RoHS Compliant: Yes |
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