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| 型号： | FDC6304P |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH DUAL 25V SSOT-6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Design/Process Change 11/May/2007 Mold Compound Change 08/April/2008 |
| 产品目录绘图： | MOSFET SuperSOT-6 |
| 标准包装： | 1 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 460mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.1 欧姆 @ 500mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 62pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDC6304PDKR |
July 1997
FDC6304P
Digital FET, Dual P-Channel
General Description
These P-Channel enhancement mode field effect transistor are
produced using Fairchild's proprietary, high cell density, DMOS
technology. This very high density process is tailored to minimize
on-state resistance at low gate drive conditions. This device is
designed especially for application in battery power applications
such as notebook computers and cellular phones. This device
has excellent on-state resistance even at gate drive voltages as
low as 2.5 volts.
Features
-25 V, -0.46 A continuous, -1.0 A Peak.
R DS(ON) = 1.5 ? @ V GS = -2.7 V
R DS(ON) = 1.1 ? @ V GS = -4.5 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. V GS(th) < 1.5 V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model .
SOT-23
SuperSOT TM -6
SuperSOT TM -8
SO-8
SOT-223
SOIC-16
Mark: .304
4
5
6
3
2
1
Absolute Maximum Ratings
T A = 25 o C unless other wise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
FDC6304P
-25
-8
Units
V
V
I D
Drain Current
- Continuous
-0.46
A
- Pulsed
-1
P D
Maximum Power Dissipation
(Note 1a)
0.9
W
(Note 1b)
0.7
T J ,T STG
ESD
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
-55 to 150
6.0
°C
kV
Human Body Model (100pf / 1500 Ohm)
THERMAL CHARACTERISTICS
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
140
60
°C/W
°C/W
? 1997 Fairchild Semiconductor Corporation
FDC6304P Rev.D
相关PDF资料 |
PDF描述 |
|---|---|
| FDC6305N | MOSFET N-CHAN DUAL 20V SSOT6 |
| FDC6306P | MOSFET P-CHAN DUAL 20V SSOT6 |
| FDC6310P | MOSFET P-CH DUAL 20V SSOT-6 |
| FDC6312P | MOSFET P-CH DUAL 20V SSOT-6 |
| FDC6318P | MOSFET P-CH DUAL 12V SSOT-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDC6304P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC6304P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC6304P_Q | 功能描述:MOSFET SSOT-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC6305 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDC6305N | 功能描述:MOSFET SSOT-6 N-CH 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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