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| 型号： | FDC6304P |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH DUAL 25V SSOT-6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Design/Process Change 11/May/2007 Mold Compound Change 08/April/2008 |
| 产品目录绘图： | MOSFET SuperSOT-6 |
| 标准包装： | 1 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 460mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.1 欧姆 @ 500mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 62pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDC6304PDKR |
Electrical Characteristics (T A = 25 O C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV DSS
? BV DSS / ? T J
I DSS
I GSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage Current
V GS = 0 V, I D = -250 μA
I D = -250 μA, Referenced to 25 o C
V DS = -20 V, V GS = 0 V
T J = 55°C
V GS = -8 V, V DS = 0 V
-25
-22
-1
-10
-100
V
mV / o C
μA
μA
nA
ON CHARACTERISTICS
(Note 2)
? V GS(th) / ? T J
Gate Threshold Voltage Temp. Coefficient
I D = -250 μA, Referenced to 25 o C
2.1
mV / o C
V GS(th)
R DS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
V DS = V GS , I D = -250 μA
V GS = -2.7 V, I D = -0.25 A
-0.65
-0.86
1.22
-1.5
1.5
V
?
V GS = -4.5 V, I D = -0.5 A
T J =125°C
0.87
1.21
1.1
2
I D(ON)
On-State Drain Current
V GS = -2.7 V, V DS = -5 V
-0.5
A
V GS = -4.5 V, V DS = -5 V
-1
g FS
Forward Transconductance
V DS = -5 V, I D = -0.5 A
0.8
S
DYNAMIC CHARACTERISTICS
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = -10 V, V GS = 0 V,
f = 1.0 MHz
62
35
9.5
pF
pF
pF
SWITCHING CHARACTERISTICS
(Note 2)
t D(on)
t r
t D(off)
t f
Q g
Q gs
Q gd
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = -6 V, I D = -0.5 A,
V GS = -4.5 V, R GEN = 50 ?
V DS = -5 V, I D = - 0.25 A,
V GS = -4.5 V
7
8
55
35
1.1
0.32
0.28
20
20
110
70
1.5
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I S
Maximum Continuous Drain-Source Diode Forward Current
-0.5
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0 V, I S = -0.5 A
(Note 2)
-0.88
-1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θ JC is guaranteed by
design while R θ CA is determined by the user's board design.
a. 140 O C/W on a 0.125 in 2 pad of
2oz copper.
b. 180 O C/W on a 0.005 in 2 of pad
of 2oz copper.
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDC6304P Rev.D
相关PDF资料 |
PDF描述 |
|---|---|
| FDC6305N | MOSFET N-CHAN DUAL 20V SSOT6 |
| FDC6306P | MOSFET P-CHAN DUAL 20V SSOT6 |
| FDC6310P | MOSFET P-CH DUAL 20V SSOT-6 |
| FDC6312P | MOSFET P-CH DUAL 20V SSOT-6 |
| FDC6318P | MOSFET P-CH DUAL 12V SSOT-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDC6304P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC6304P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC6304P_Q | 功能描述:MOSFET SSOT-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC6305 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDC6305N | 功能描述:MOSFET SSOT-6 N-CH 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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