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| 型号： | FDC6306P |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CHAN DUAL 20V SSOT6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 08/April/2008 |
| 产品目录绘图： | MOSFET SuperSOT-6 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 170 毫欧 @ 1.9A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4.2nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 441pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDC6306PDKR |
February 1999
FDC6306P
Dual P-Channel 2.5V Specified PowerTrench ? MOSFET
General Description
Features
These P-Channel 2.5V specified MOSFETs are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain low gate charge for
superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for applications
where the bigger more expensive SO-8 and TSSOP-8
packages are impractical.
?
?
?
?
-1.9 A, -20 V. R DS(on) = 0.170 ? @ V GS = -4.5 V
R DS(on) = 0.250 ? @ V GS = -2.5 V
Low gate charge (3 nC typical).
Fast switching speed.
High performance trench technology for extremely
low R DS(ON) .
Applications
? Load switch
? Battery protection
? Power management
D2
?
SuperSOTTM-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
D1
S1
4
5
3
2
G2
SuperSOT -6
TM
G1
S2
6
1
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Drain-Source Voltage
Gate-Source Voltage
Parameter
Ratings
-20
± 8
Units
V
V
I D
Drain Current
- Continuous
(Note 1a)
-1.9
A
- Pulsed
-5
P D
Power Dissipation for Single Operation
(Note 1a)
0.96
W
(Note 1b)
(Note 1c)
0.9
0.7
T J , T stg
Operating and Storage Junction Temperature Range
-55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
130
60
° C/W
° C/W
Package Outlines and Ordering Information
Device Marking
. 306
Device
FDC6306P
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
? 1999 Fairchild Semiconductor Corporation
FDC6306P Rev. C
相关PDF资料 |
PDF描述 |
|---|---|
| FDC6310P | MOSFET P-CH DUAL 20V SSOT-6 |
| FDC6312P | MOSFET P-CH DUAL 20V SSOT-6 |
| FDC6318P | MOSFET P-CH DUAL 12V SSOT-6 |
| FDC6320C | MOSFET N/P-CH DUAL 25V SSOT6 |
| FDC6321C | MOSFET N/P-CH DUAL 25V SSOT-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDC6306P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDC6306P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-6 |
| FDC6306P_D87Z | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC6306P_NL | 制造商:Fairchild Semiconductor Corporation 功能描述:Trans MOSFET P-CH 20V 1.9A 6-Pin SuperSOT T/R |
| FDC6306P_Q | 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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