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| 型号： | FDC6321C |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH DUAL 25V SSOT-6 |
| 产品变化通告： | Design/Process Change 11/May/2007 Mold Compound Change 08/April/2008 |
| 产品目录绘图： | MOSFET SuperSOT-6 |
| 标准包装： | 1 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 680mA，460mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 450 毫欧 @ 500mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.3nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 50pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDC6321CDKR |
April 1999
FDC6321C
Dual N & P Channel , Digital FET
General Description
These dual N & P Channel logic level enhancement mode
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. This device has been designed
especially for low voltage applications as a replacement for
digital transistors in load switching applications. Since bias
resistors are not required this dual digital FET can replace
several digital transistors with different bias resistors.
Features
N-Ch 25 V, 0.68 A, R DS(ON) = 0.45 ? @ V GS = 4.5 V
P-Ch -25 V, -0.46 A, R DS(ON) = 1.1 ? @ V GS = -4.5 V.
Very low level gate drive requirements allowing direct
operation in 3 V circuits. V GS(th) < 1.0V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Replace multiple dual NPN & PNP digital transistors.
SOT-23
SuperSOT TM -6
SuperSOT TM -8
SO-8
SOT-223
SOIC-16
Mark:.321
D2
D1
S1
G2
4
5
3
2
SuperSOT -6
TM
G1
S2
6
1
Absolute Maximum Ratings
T A = 25 o C unless other wise noted
Symbol
V DSS , V CC
V GSS , V IN
Parameter
Drain-Source Voltage, Power Supply Voltage
Gate-Source Voltage,
N-Channel
25
8
P-Channel
-25
-8
Units
V
V
I D , I O
Drain/Output Current
- Continuous
0.68
-0.46
A
- Pulsed
2
-1.5
P D
Maximum Power Dissipation
(Note 1a)
0.9
W
(Note 1b)
0.7
T J ,T STG
ESD
Operating and Storage Tempature Ranger
Electrostatic Discharge Rating MIL-STD-883D
-55 to 150
6
°C
kV
Human Body Model (100pf / 1500 Ohm)
THERMAL CHARACTERISTICS
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
140
60
°C/W
°C/W
? 1999 Fairchild Semiconductor Corporation
FDC6321C.RevB
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDC6321C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NP SUPERSOT-6 |
| FDC6321C_Q | 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC6322 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N & P Channel , Digital FET |
| FDC6322C | 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC6322C_Q | 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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