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| 型号： | FDC6333C |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH/P-CHAN 30V SSOT6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 08/April/2008 |
| 产品目录绘图： | MOSFET SuperSOT-6 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.5A，2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 95 毫欧 @ 2.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6.6nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 282pF @ 15V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDC6333CDKR |
October 2001
FDC6333C
30V N & P-Channel PowerTrench ? MOSFETs
General Description
Features
These N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
? Q1
? Q2
2.5 A, 30V.
–2.0 A, 30V.
R DS(ON) = 95 m ? @ V GS = 10 V
R DS(ON) = 150 m ? @ V GS = 4.5 V
R DS(ON) = 150 m ? @ V GS = –10 V
These devices have been designed to offer
exceptional power dissipation in a very small footprint
for applications where the bigger more expensive
SO-8 and TSSOP-8 packages are impractical.
Applications
? DC/DC converter
? Load switch
? LCD display inverter
R DS(ON) = 220 m ? @ V GS = –4.5 V
? Low gate charge
? High performance trench technology for extremely
low R DS(ON) .
? SuperSOT –6 package: small footprint (72% smaller than
SO-8); low profile (1mm thick).
D1
S1
D2
4
Q2(P)
3
G2
5
2
SuperSOT
Pin 1
TM
-6
G1
S2
6
1
T A =25 C unless otherwise noted
SuperSOT?-6
Absolute Maximum Ratings
o
Q1(N)
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Q1
30
± 16
Q2
–30
± 25
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
2.5
–2.0
A
– Pulsed
8
–8
P D
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
0.96
0.9
0.7
W
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
130
60
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
.333
Device
FDC6333C
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
? 2001 Fairchild Semiconductor Corporation
FDC6333C Rev C (W)
相关PDF资料 |
PDF描述 |
|---|---|
| FDC634P | MOSFET P-CH 20V 3.5A SSOT-6 |
| FDC637AN | MOSFET N-CH 20V 6.2A SSOT-6 |
| FDC637BNZ | MOSFET N-CH 20V 6.2A 6-SSOT |
| FDC638APZ | MOSFET P-CH 20V 4.5A SSOT-6 |
| FDC638P | MOSFET P-CH 20V 4.5A SSOT-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDC6333C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET NP CH 30V 2.5/2A SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NP CH, 30V, 2.5/2A, SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NP CH, 30V, 2.5/2A, SSOT6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):95mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V ;RoHS Compliant: Yes |
| FDC6333C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N/P CH MOSFET, 30V SUPER SOT-6 |
| FDC6333C_Q | 功能描述:MOSFET 30V/-30V N/P RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC6333C-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDC6333C Series 30 V 95 mOhm N & P-Channel PowerTrench Mosfet - SSOT-6 |
| FDC633N | 功能描述:MOSFET SSOT-6 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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