参数资料
型号: FDC6321C
厂商: Fairchild Semiconductor
文件页数: 3/8页
文件大小: 0K
描述: MOSFET N/P-CH DUAL 25V SSOT-6
产品变化通告: Design/Process Change 11/May/2007
Mold Compound Change 08/April/2008
产品目录绘图: MOSFET SuperSOT-6
标准包装: 1
FET 型: N 和 P 沟道
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 25V
电流 - 连续漏极(Id) @ 25° C: 680mA,460mA
开态Rds(最大)@ Id, Vgs @ 25° C: 450 毫欧 @ 500mA,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 2.3nC @ 5V
输入电容 (Ciss) @ Vds: 50pF @ 10V
功率 - 最大: 700mW
安装类型: 表面贴装
封装/外壳: SOT-23-6 细型,TSOT-23-6
供应商设备封装: 6-SSOT
包装: 标准包装
产品目录页面: 1603 (CN2011-ZH PDF)
其它名称: FDC6321CDKR
Electrical Characteristics (T A = 25 O C unless otherwise noted )
SWITCHING CHARACTERISTICS (Note 2)
Symbol
t D(on)
Parameter
Turn - On Delay Time
Conditions
N-Channel
Type
N-Ch
Min
Typ
3
Max
6
Units
nS
V DD = 6 V, I D = 0.5 A,
P-Ch
7
20
t r
Turn - On Rise Time
V Gs = 4.5 V, R GEN = 50 ?
N-Ch
8
16
nS
P-Ch
9
18
t D(off)
Turn - Off Delay Time
P-Channel
N-Ch
17
30
nS
V DD = -6 V, I D = -0.5 A,
P-Ch
55
110
t f
Turn - Off Fall Time
V Gen = -4.5 V, R GEN = 50 ?
N-Ch
13
25
nS
P-Ch
35
70
Q g
Total Gate Charge
N-Channel
N-Ch
1.64
2.3
nC
V DS = 5 V, I D = 0.5 A,
P-Ch
1.1
1.5
Q gs
Gate-Source Charge
V GS = 4.5 V
N-Ch
0.38
nC
P- Channel
P-Ch
0.32
Q gd
Gate-Drain Charge
V DS = -5 V,
N-Ch
0.45
nC
I D = -0.25 A, V GS = -4.5 V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
P-Ch
0.25
I S
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
0.3
A
P-Ch
-0.5
V SD
Drain-Source Diode Forward Voltage
V GS = 0 V, I S = 0.5 A
(Note)
N-Ch
0.83
1.2
V
T J =125°C
0.69
0.85
V GS = 0 V, I S = -0.5 A
(Note)
T J =125°C
P-Ch
-0.89
-0.75
-1.2
-0.85
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where thecase thermal reference is defined as the solder mounting surface of the drain pins. R θ JC is guaranteed
by design while R θ CA is determined by the user's board design.
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
a. 140 O C/W on a 0.125 in 2 pad of
2oz copper.
b. 180 O C/W on a 0.005 in 2 of pad
of 2oz copper.
FDC6321C.RevB
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FDC6321C 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NP SUPERSOT-6
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FDC6322 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N & P Channel , Digital FET
FDC6322C 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6322C_Q 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube