- 您现在的位置：买卖IC网 > Datasheet目录415 > FDC6305N (Fairchild Semiconductor)MOSFET N-CHAN DUAL 20V SSOT6 Datasheet资料下载
参数资料
| 型号： | FDC6305N |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN DUAL 20V SSOT6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 08/April/2008 |
| 产品目录绘图： | MOSFET SuperSOT-6 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 80 毫欧 @ 2.7A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 310pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1602 (CN2011-ZH PDF) |
| 其它名称： | FDC6305NDKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
V DS = 16 V, V GS = 0 V
V GS = 8 V, V DS = 0 V
V GS = -8 V, V DS = 0 V
20
14
1
100
-100
V
mV/ ° C
μ A
nA
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
V DS = V GS , I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
V GS = 4.5, I D = 2.7 A
V GS = 4.5 I D = 2.7 A, T J = 125 ° C
0.4
0.9
-2.7
0.060
0.095
1.5
0.080
0.128
V
mV/ ° C
?
V GS = 2.5 V, I D = 2.2 A
0.085
0.120
I D(on)
g FS
On-State Drain Current
Forward Transconductance
V GS = 4.5 V, V DS = 5 V
V DS = 5 V, I D = 2.7 A
6
8
A
S
Dynami c Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 10 V, V GS = 0 V,
f = 1.0 MHz
310
80
40
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 10 V, I D = 1 A,
V GS = 4.5 V, R GEN = 6 ?
V DS = 10 V, I D = 2.7 A,
V GS = 4.5 V
5
8.5
11
3
3.5
0.55
0.95
15
17
20
10
5
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain-Source Diode Forward Current
0.8
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0 V, I S = 0.8 A
(Note 2)
0.77
1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design. Both devices are assumed to be operating and
sharing the dissipated heat energy equally.
a) 130 ° C/W when
mounted on a 0.125 in 2
pad of 2 oz. copper.
b) 140 ° C/W when
mounted on a 0.005 in 2
pad of 2 oz. copper.
c) 180 ° C/W on a minimum
mounting pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%
FDC6305N, Rev. C
相关PDF资料 |
PDF描述 |
|---|---|
| FDC6306P | MOSFET P-CHAN DUAL 20V SSOT6 |
| FDC6310P | MOSFET P-CH DUAL 20V SSOT-6 |
| FDC6312P | MOSFET P-CH DUAL 20V SSOT-6 |
| FDC6318P | MOSFET P-CH DUAL 12V SSOT-6 |
| FDC6320C | MOSFET N/P-CH DUAL 25V SSOT6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDC6305N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SUPERSOT-6 |
| FDC6305N_Q | 功能描述:MOSFET SSOT-6 N-CH 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC6306P | 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC6306P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDC6306P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-6 |
发布紧急采购，3分钟左右您将得到回复。