- 您现在的位置：买卖IC网 > Datasheet目录415 > FDC6318P (Fairchild Semiconductor)MOSFET P-CH DUAL 12V SSOT-6 Datasheet资料下载
参数资料
| 型号： | FDC6318P |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH DUAL 12V SSOT-6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 08/April/2008 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 90 毫欧 @ 2.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 455pF @ 6V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 标准包装 |
| 其它名称： | FDC6318PDKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
? BV DSS
? T J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V GS = 0 V, I D = –250 μ A
I D = –250 μ A, Referenced to 25 ° C
–12
–2.9
V
mV/ ° C
I DSS
I GSSF
I GSSR
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V DS = –10 V,
V GS = 8 V,
V GS = –8 V,
V GS = 0 V
V DS = 0 V
V DS = 0 V
–1
100
–100
μ A
nA
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V DS = V GS , I D = –250 μ A
I D = –250 μ A, Referenced to 25 ° C
V GS = –4.5 V, I D = –2.5 A
V GS = –2.5 V, I D = –2 A
–0.4
–0.7
2.3
69
93
–1.5
90
125
V
mV/ ° C
m ?
V GS = –1.8 V, I D = –1.6 A
V GS = –4.5 V, I D = –2.5A, T J =125 ° C
135
85
200
120
I D(on)
On–State Drain Current
V GS = –4.5 V, V DS = –5 V
–6
A
g FS
Forward Transconductance
V DS = –5 V,
I D = –2.5 A
8
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = –6 V,
f = 1.0 MHz
V GS = 0 V,
455
194
134
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
V DD = –6 V, I D = –1 A,
V GS = –4.5 V, R GEN = 6 ?
9
14
21
17
18
25
34
31
ns
ns
ns
ns
Q g
Q gs
Total Gate Charge
Gate–Source Charge
V DS = –6 V,
V GS = –4.5 V
I D = –2.5 A,
5.4
1.1
8
nC
nC
Q gd
Gate–Drain Charge
1.3
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
–0.8
A
V SD
Drain–Source Diode Forward
Voltage
V GS = 0 V, I S = –0.8 A
(Note 2)
–0.7
–1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
on a .004 in pad of 2 oz
a) 130 ° C/W when
mounted on a 0.125
in 2 pad of 2 oz.
copper.
b) 140°C/W when mounted
2
copper
c) 180°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
FDC6318P Rev D (W)
相关PDF资料 |
PDF描述 |
|---|---|
| FDC6320C | MOSFET N/P-CH DUAL 25V SSOT6 |
| FDC6321C | MOSFET N/P-CH DUAL 25V SSOT-6 |
| FDC6327C | MOSFET N/P-CH DUAL 20V SSOT-6 |
| FDC6333C | MOSFET N-CH/P-CHAN 30V SSOT6 |
| FDC634P | MOSFET P-CH 20V 3.5A SSOT-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDC6318P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC6318P_Q | 功能描述:MOSFET SuperSOT-3 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC6320 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N & P Channel , Digital FET |
| FDC6320C | 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC6320C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
发布紧急采购，3分钟左右您将得到回复。