参数资料
型号: FDC6331L
厂商: Fairchild Semiconductor
文件页数: 2/4页
文件大小: 0K
描述: IC LOAD SWITCH INT 8VIN SSOT-6
产品变化通告: Mold Compound Change 08/April/2008
标准包装: 1
类型: 高端开关
输出数: 1
Rds(开): 55 毫欧
内部开关:
电流限制: 2.8A
输入电压: 2.5 V ~ 8 V
工作温度: -55°C ~ 150°C
安装类型: 表面贴装
封装/外壳: SOT-23-6 细型,TSOT-23-6
供应商设备封装: 6-SSOT
包装: 标准包装
产品目录页面: 1216 (CN2011-ZH PDF)
其它名称: FDC6331LDKR
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV IN
Vin Breakdown Voltage
V ON/OFF = 0 V, I D = –250 A
8
V
I Load
Zero Gate Voltage Drain Current
V IN = 6.4 V,
V ON/OFF = 0 V
–1
A
I FL
I RL
Leakage Current, Forward
Leakage Current, Reverse
V ON/OFF = 0 V, V IN = 8 V
V ON/OFF = 0 V, V IN = –8 V
–100
100
nA
nA
On Characteristics
(Note 2)
V ON/OFF (th)
R DS(on)
Gate Threshold Voltage
Static Drain–Source
V IN = V ON/OFF , I D = –250 A
V GS = –4.5 V, I D = –2.8A
0.4
0.9
34
1.5
55
V
m
On–Resistance (Q2)
V GS = –2.5 V, I D = –2.5 A
V GS = –1.8 V, I D = –2.0 A
45
64
70
100
R DS(on)
Static Drain–Source
On–Resistance (Q1)
V GS = 4.5 V, I D = 0.4A
V GS = 2.7 V, I D = 0.2 A
3.1
3.8
4
5
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
–0.6
A
V SD
Drain–Source Diode Forward
V ON/OFF = 0 V, I S = –0.6 A
(Note 2)
–1.2
V
Voltage
Notes:
1. R J A is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R JC is guar anteed by design while R J A is determined by the user’s board design.
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDC6331L Load Switch Application Circuit
IN
R1
Q2
Q1
C1
OUT
LOAD
ON/OFF
R2
External Component Recommendation:
For additional in-rush current control, R2 and C1 can be added. For more information, see application note AN1030.
FDC6331L Rev D
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