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| 型号： | FDC6401N |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 20V SSOT-6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 08/April/2008 |
| 产品目录绘图： | MOSFET SuperSOT-6 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 70 毫欧 @ 3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4.6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 324pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1602 (CN2011-ZH PDF) |
| 其它名称： | FDC6401NDKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage
V GS = 0 V,
I D = 250 μ A
20
V
? BV DSS
? T J
Breakdown Voltage Temperature
Coefficient
I D = 250 μ A, Referenced to 25 ° C
13
mV/ ° C
I DSS
I GSSF
I GSSR
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V DS = 16 V,
V GS = 12 V,
V GS = –12 V
V GS = 0 V
V DS = 0 V
V DS = 0 V
1
–100
100
μ A
nA
nA
On Characteristics
(Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS ,
I D = 250 μ A
0.5
0.9
1.5
V
? V GS(th)
? T J
Gate Threshold Voltage
Temperature Coefficient
I D = 250 μ A, Referenced to 25 ° C
–3
mV/ ° C
R DS(on)
Static Drain–Source
V GS = 4.5 V,
I D = 3.0 A
50
70
m ?
On–Resistance
V GS = 2.5 V, I D = 2.5 A
V GS = 4.5 V, I D = 3.0 A,T J =125 ° C
66
71
95
106
I D(on)
g FS
On–State Drain Current
Forward Transconductance
V GS = 4.5 V,
V DS = 5V,
V DS = 5 V
I D = 3.0 A
12
10
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 10 V,
f = 1.0 MHz
V GS = 0 V,
324
82
42
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
V DD = 10 V, I D = 1 A,
V GS = 4.5 V, R GEN = 6 ?
5
7
13
1.6
10
14
23
3
ns
ns
ns
ns
Q g
Q gs
Total Gate Charge
Gate–Source Charge
V DS = 10 V,
V GS = 4.5 V
I D = 3.0 A,
3.3
0.95
4.6
nC
nC
Q gd
Gate–Drain Charge
0.7
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
0.8
A
V SD
Drain–Source Diode Forward
Voltage
V GS = 0 V,
I S = 0.8 A
(Note 2)
0.7
1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
in pad of 2 oz.
a) 130 ° C/W when
mounted on a 0.125
2
copper.
b) 140 °C/W when
mounted on a .004 in
pad of 2 oz copper
2
c) 180 C°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
FDC6401N Rev C (W)
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相关代理商/技术参数 |
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| FDC6401N_NL | 功能描述:MOSFET Dual N-Ch 2.5V PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC6401N_Q | 功能描述:MOSFET Dual N-Ch 2.5V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC6401N-CUT TAPE | 制造商:FAIRCHILD 功能描述:20V 70 mOhm Dual N-Ch 2.5V Specified PowerTrench Mosfet SSOT-6 |
| FDC640P | 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC640P_01 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel 2.5V PowerTrench Specified MOSFET |
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