- 您现在的位置：买卖IC网 > Datasheet目录416 > FDC642P (Fairchild Semiconductor)MOSFET P-CH 20V 4A SSOT-6 Datasheet资料下载
参数资料
| 型号： | FDC642P |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 4A SSOT-6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Design/Process Change 11/May/2007 Mold Compound Change 08/April/2008 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 65 毫欧 @ 4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 640pF @ 10V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 标准包装 |
| 其它名称： | FDC642PDKR |
January 2010
FDC642P
Single P-Channel 2.5V Specified PowerTrench ? MOSFET
-20 V, -4.0 A, 65 m ?
Features
Max r DS(on) = 65 m ? at V GS = -4.5 V, I D = -4.0 A
Max r DS(on) = 100 m ? at V GS = -2.5 V, I D = -3.2 A
Fast switching speed
Low gate charge (11nC typical)
High performance trench technology for extremely low r DS(on)
SuperSOT TM -6 package: small footprint (72% smaller than
standard SO-8); low profile (1 mm thick)
Termination is Lead-free and RoHS Compliant
General Description
This P-Channel 2.5V specified MOSFET is produced using
Fairchild’s advanced PowerTrench ? process that has been
especially tailored to minimize on-state resistance and yet
maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power
dissipation in a very small footprint for applications where the
larger packages are impractical.
Applications
Load switch
Battery protection
Power management
D
D
G
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
D
D
S
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
-20
±8
Units
V
V
I D
P D
-Continuous
-Pulsed
Power Dissipation
Power Dissipation
T A = 25°C
(Note 1a)
( Note 1a)
(Note 1b)
-4.0
-20
1.6
0.8
A
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to + 150
°C
Thermal Characteristics
R θ JA
Thermal Resistance, Junction to Ambient
(Note 1a)
78
°C/W
Package Marking and Ordering Information
Device Marking
.642
Device
FDC642P
Package
SSOT-6 TM
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
?2010 Fairchild Semiconductor Corporation
FDC642P Rev . C2
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDC645N | MOSFET N-CH 30V 5.5A SSOT-6 |
| FDC6506P | MOSFET P-CHAN DUAL 30V SSOT6 |
| FDC653N | MOSFET N-CH 30V 5A SSOT-6 |
| FDC654P | MOSFET P-CH 30V 3.6A SSOT-6 |
| FDC655BN | MOSFET N-CH 30V 6.3A SSOT-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDC642P_09 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel PowerTrench?? MOSFET -20V, -4A, 100m?? |
| FDC642P_F085 | 功能描述:MOSFET P-CHANNEL 2.5V PowerTrench MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC6432SH | 功能描述:MOSFET 12V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC645 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
| FDC645N | 功能描述:MOSFET SSOT-6 N-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。