参数资料
型号: FDC642P
厂商: Fairchild Semiconductor
文件页数: 3/5页
文件大小: 0K
描述: MOSFET P-CH 20V 4A SSOT-6
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Design/Process Change 11/May/2007
Mold Compound Change 08/April/2008
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 4A
开态Rds(最大)@ Id, Vgs @ 25° C: 65 毫欧 @ 4A,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 10nC @ 4.5V
输入电容 (Ciss) @ Vds: 640pF @ 10V
功率 - 最大: 800mW
安装类型: 表面贴装
封装/外壳: SOT-23-6 细型,TSOT-23-6
供应商设备封装: 6-SSOT
包装: 标准包装
其它名称: FDC642PDKR
Typical Characteristics T J = 25°C unless otherwise noted
20
16
V GS = -4.5 V
V GS = -3.5 V
5
4
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = -3.0 V
V GS = -2.0 V
V GS = -1.5 V
12
V GS = -2.5 V
3
V GS = -2.0 V
8
4
V GS = -1.5 V
2
1
V GS = -2.5 V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = -3.0 V V GS = -3.5 V
V GS = -4.5 V
0
0
1
2
3
4
5
0
0
4
8
12
16
20
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
-I D , DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
1.4
I D = -4.0 A
V GS = -4.5 V
180
150
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
I D = -4.0 A
1.2
120
1.0
0.8
0.6
90
60
30
T J = 125 o C
T J = 25 o C
-75
-50
-25
0
25
50
75
100 125 150
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On Resistance
vs Junction Temperature
20
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
16
V DS = -5 V
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
V GS = 0 V
12
8
1
0.1
T J = 150 o C
T J = 25 o C
4
T J = 150 o C
T J = 25 o C
T J = -55 o C
T J = -55 o C
0
0.5
1.0
1.5
2.0
2.5
3.0
0.01
0.2
0.4
0.6
0.8
1.0
1.2
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
-V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2010 Fairchild Semiconductor Corporation
FDC642P Rev . C2
3
www.fairchildsemi.com
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