- 您现在的位置：买卖IC网 > Datasheet目录416 > FDC642P (Fairchild Semiconductor)MOSFET P-CH 20V 4A SSOT-6 Datasheet资料下载
参数资料
| 型号： | FDC642P |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 4A SSOT-6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Design/Process Change 11/May/2007 Mold Compound Change 08/April/2008 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 65 毫欧 @ 4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 640pF @ 10V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 标准包装 |
| 其它名称： | FDC642PDKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = -250 μ A, V GS = 0 V
I D = -250 μ A, referenced to 25°C
V DS = -16 V, V GS = 0 V
V GS = ±8 V, V DS = 0 V
-20
-13
-1
±10
V
mV / °C
μ A
μ A
On Characteristics
V GS(th)
? V GS(th)
? T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = -250 μ A
I D = -250 μ A, referenced to 25°C
-0.4
-0.6
2.5
-1.5
V
mV/°C
V GS = -4.5 V, I D = -4.0 A
45
65
r DS(on)
g FS
Static Drain to Source On Resistance
Forward Transconductance
V GS = -2.5 V, I D = -3.2 A
V GS = -4.5 V, I D = -4.0 A,
T J = 125°C
V DS = -5 V, I D = -4.0 A
55
62
15
100
90
m ?
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = -10 V, V GS = 0 V,
f = 1 MHz
700
110
95
925
150
145
pF
pF
pF
Switching Characteristics
t d(on)
Turn-On Delay Time
6
12
ns
t r
t d(off)
t f
Q g
Q gs
Q gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V DD = -10 V, I D = -1 A,
V GS = -4.5 V, R GEN = 6 ?
V DD = -10 V, I D = -4 A
V GS = --4.5 V
7
120
52
11
1.1
3.0
14
190
83
16
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
I S
Maximum Continuous Drain-Source Diode Forward Current
-1.3
A
V SD
Source-Drain Diode Forward Voltage
V GS = 0 V, I S = -1.3 A
(Note 2)
-0.7
-1.2
V
Notes:
1: R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R θ JC is guaranteed by design while R θ CA is determined by the user ’s board design.
a. 78 °C/W when mounted on a 1 in 2 pad of 2 oz copper.
b. 156 °C/W when mounted on a minimum pad of 2 oz copper.
2: Pulse Test: Pulse Width<300 us, Duty Cycle<2.0%.
?2010 Fairchild Semiconductor Corporation
FDC642P Rev . C2
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDC645N | MOSFET N-CH 30V 5.5A SSOT-6 |
| FDC6506P | MOSFET P-CHAN DUAL 30V SSOT6 |
| FDC653N | MOSFET N-CH 30V 5A SSOT-6 |
| FDC654P | MOSFET P-CH 30V 3.6A SSOT-6 |
| FDC655BN | MOSFET N-CH 30V 6.3A SSOT-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDC642P_09 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel PowerTrench?? MOSFET -20V, -4A, 100m?? |
| FDC642P_F085 | 功能描述:MOSFET P-CHANNEL 2.5V PowerTrench MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC6432SH | 功能描述:MOSFET 12V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC645 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
| FDC645N | 功能描述:MOSFET SSOT-6 N-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。