参数资料
型号: FDD120AN15A0
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: N-Channel PowerTrench MOSFET
中文描述: 14 A, 150 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封装: TO-252AA, 3 PIN
文件页数: 8/11页
文件大小: 251K
代理商: FDD120AN15A0
2002 Fairchild Semiconductor Corporation
FDP120AN15A0 / FDD120AN15A0 Rev. B
F
PSPICE Electrical Model
.SUBCKT FDD120AN15A0 2 1 3 ;
Ca 12 8 2.5e-10
Cb 15 14 2.5e-10
Cin 6 8 7.5e-10
rev July 2002
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
Ebreak 11 7 17 18 162
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
Lgate 1 9 3e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 2e-9
RLgate 1 9 30
RLdrain 2 5 10
RLsource 3 7 20
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 6.55e-2
Rgate 9 20 3.6
RSLC1 5 51 RSLCMOD 1.0e-6
RSLC2 5 50 1.0e3
Rsource 8 7 RsourceMOD 2.8e-2
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*25),3))}
.MODEL DbodyMOD D (IS=4E-12 N=1.07 RS=6.5e-3 TRS1=3.0e-3 TRS2=1.5e-6
+ CJO=5.5e-10 M=0.65 TT=5e-8 XTI=4.2)
.MODEL DbreakMOD D (RS=0.5 TRS1=1e-3 TRS2=-1e-6)
.MODEL DplcapMOD D (CJO=1.56e-10 IS=1.0e-30 N=10 M=0.62)
.MODEL MmedMOD NMOS (VTO=3.6 KP=1.8 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=3.6)
.MODEL MstroMOD NMOS (VTO=4.4 KP=30 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MweakMOD NMOS (VTO=3.14 KP=0.02 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=36 RS=0.1)
.MODEL RbreakMOD RES (TC1=1.1e-3 TC2=-1e-6)
.MODEL RdrainMOD RES (TC1=8.5e-3 TC2=2.5e-5)
.MODEL RSLCMOD RES (TC1=3.4e-3 TC2=1.5e-6)
.MODEL RsourceMOD RES (TC1=4.1e-3 TC2=1e-6)
.MODEL RvthresMOD RES (TC1=-3.6e-3 TC2=-1.4e-5)
.MODEL RvtempMOD RES (TC1=-4.1e-3 TC2=1.5e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-6.0 VOFF=-4.0)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4.0 VOFF=-6.0)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2.5 VOFF=-0.5)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.5 VOFF=-2.5)
.ENDS
Note: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
19
VBAT
RVTHRES
IT
17
18
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
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