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参数资料
| 型号： | FDD5680 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 8.5A D-PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 2,500 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 21 毫欧 @ 8.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 46nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1835pF @ 30V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252 |
| 包装： | 带卷 (TR) |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
W DSS
Single Pulse Drain-Source
V DD = 30 V, I D = 38 A
140
mJ
Avalanche Energy
I AR
Maximum Drain-Source Avalanch e Current
38
A
BV DSS
Drain-Source Breakdown
V GS = 0 V, I D = 250 μ A
60
V
? BV DSS
? T J
I DSS
Voltage
Breakdown Voltage I D = 250 μ A, Referenced to 25 ° C
Temperature Coefficient
Zero Gate Voltage Drain Current V DS = 48 V, V GS = 0 V
60
1
mV/ ° C
μ A
I GSSF
Gate-Body Leakage Current,
V GS = 20V, V DS = 0 V
100
nA
Forward
I GSSR
Gate-Body Leakage Current,
V GS = -20 V, V DS = 0 V
-100
nA
Reverse
On Characteristics (Note 2)
V GS(th) Gate Threshold Voltage
V DS = V GS , I D = 250 μ A
2
2.4
4
V
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
I D = 250 μ A,Referenced to 25 ° C
V GS = 10 V, I D = 8.5 A
V GS = 10 V, I D = 8.5 A,T J =125 ° C
-6.4
0.017
0.028
0.021
0.042
mV/ ° C
?
V GS = 6 V, I D = 7.5 A
0.019
0.025
I D(on)
g FS
On-State Drain Current
Forward Transconductance
V GS = 10 V, V DS = 5 V
V DS = 5 V, I D = 8.5 A
50
30
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 30 V, V GS = 0 V,
f = 1.0 MHz
1835
210
90
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 30 V, I D = 1 A,
V GS = 10 V, R GEN = 6 ?
V DS = 30 V, I D = 8.5 A,
V GS = 10 V,
15
9
35
16
33
6.5
7.5
27
18
56
26
46
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain-Source Diode Forward Current
2.3
A
V SD
Drain-Source Diode Forward
V GS = 0 V, I S = 2.3 A
(Note 2)
0.75
1.2
V
Notes:
Voltage
1. R θ JA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab.
R θ JC is guaranteed by design while R θ JA is determined by the user's board design.
a) R θ JA = 45oC/W when mounted
on a 1in2 pad of 2oz copper.
b) R θ JA = 96oC/W when mounted
on a 0.076 pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%
FDD5680, Rev. C
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