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参数资料
| 型号： | FDD6530A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 21A D-PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 2,500 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 21A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 32 毫欧 @ 8A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 9nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 710pF @ 10V |
| 功率 - 最大： | 1.6W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252 |
| 包装： | 带卷 (TR) |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Drain-Source Avalanche Ratings (Note 2)
W DSS
I AR
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Single Pulse,
V DD = 10 V
55
8
mJ
A
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage
V GS = 0 V,
I D = 250 μ A
20
V
? BV DSS
? T J
Breakdown Voltage Temperature
Coefficient
I D = 250 μ A, Referenced to 25 ° C
15
mV/ ° C
I DSS
I GSSF
I GSSR
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V DS = 16 V,
V GS = 8 V,
V GS = –8 V,
V GS = 0 V
V DS = 0 V
V DS = 0 V
1
100
–100
μ A
nA
nA
On Characteristics
(Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS ,
I D = 250 μ A
0.4
0.9
1.2
V
? V GS(th)
? T J
Gate Threshold Voltage
Temperature Coefficient
I D = 250 μ A, Referenced to 25 ° C
–3
mV/ ° C
R DS(on)
Static Drain–Source
V GS = 4.5 V,
I D = 8 A
26
32
m ?
On–Resistance
V GS = 2.5 V, I D = 6.6 A
V GS = 4.5 V, I D = 8 A, T J = 125 ° C
36
36
47
48
I D(on)
g FS
On–State Drain Current
Forward Transconductance
V GS = 4.5 V,
V DS = 5 V,
V DS = 5 V
I D = 8 A
20
21
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 10 V,
f = 1.0 MHz
V GS = 0 V,
710
173
84
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = 10 V,
V GS = 4.5 V,
V DS = 10 V,
V GS = 4.5 V
I D = 1 A,
R GEN = 6
I D = 8 A,
8
7
18
4
6.5
1.3
16
14
32
8
9
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
1.9
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
2.7
A
V SD
Drain–Source Diode Forward
V GS = 0 V,
I S = 2.7 A
(Note 2)
0.8
1.2
V
Voltage
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
1in pad of 2 oz copper
a) R θ JA = 45°C/W when mounted on a
2
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
b) R θ JA = 96°C/W when mounted
on a minimum pad.
3. Maximum current is calculated as:
P D
R DS ( ON )
where P D is maximum power dissipation at T C = 25°C and R DS(on) is at T J(max) and V GS = 10V. Package current limitation is 21A
FDD6530A Rev. C (W)
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