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参数资料
| 型号： | FDD6612A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 9.5A DPAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 20 毫欧 @ 9.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 9.4nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 660pF @ 15V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252-3 |
| 包装： | 标准包装 |
| 其它名称： | FDD6612ADKR |
February 2004
FDD6612A/FDU6612A
30V N-Channel PowerTrench ? MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
? 30 A, 30 V
R DS(ON) = 20 m ? @ V GS = 10 V
R DS(ON) = 28 m ? @ V GS = 4.5 V
switching PWM controllers. It has been optimized for
low gate charge, low R DS( ON) , fast switching speed and
extremely low R DS(ON) in a small package.
Applications
? DC/DC converter
? Low gate charge
? Fast Switching
? High performance trench technology for extremely
low R DS(ON)
? Motor Drives
D
D
G
D-PAK
S
TO-252
(TO-252)
G D S
I-PAK
(TO-251AA)
G
S
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
30
± 20
Units
V
V
I D
Continuous Drain Current @T C =25°C
@T A =25°C
Pulsed
(Note 3)
(Note 1a)
(Note 1a)
30
9.5
60
A
P D
Power Dissipation
@T C =25°C
(Note 1)
36
W
@T A =25°C
@T A =25°C
(Note 1a)
(Note 1b)
2.8
1.3
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +175
° C
Thermal Characteristics
R θ JC
R θ JA
R θ JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
3.9
45
96
° C/W
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
FDD6612A
FDU6612A
Device
FDD6612A
FDU6612A
Package
D-PAK (TO-252)
I-PAK (TO-251)
Reel Size
13’’
Tube
Tape width
12mm
N/A
Quantity
2500 units
75
? 2004 Fairchild Semiconductor Corporation
FDD6612A/FDU6612A Rev E(W)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD6612A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 30V 30A DPAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 30A, DPAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 30A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; No. of Pins:3 ;RoHS Compliant: Yes |
| FDD6612A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 30V, 30A, TO-252 |
| FDD6612A_F054 | 制造商:Fairchild Semiconductor Corporation 功能描述:DPAK, SINGLE, NCH - Tape and Reel |
| FDD6612A_OLDDI | 制造商:Fairchild 功能描述:DPAK, SINGLE, NCH |
| FDD6630A | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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