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参数资料
| 型号： | FDD6612A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 9.5A DPAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 20 毫欧 @ 9.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 9.4nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 660pF @ 15V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252-3 |
| 包装： | 标准包装 |
| 其它名称： | FDD6612ADKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Sourc e Diode Forward Current
2.3
A
V SD
Drain–Source Diode Forward
V GS = 0 V,
I S = 2.3 A
(Note 2)
0.8
1.2
V
Voltage
trr
Qrr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
IF = 9.5 A,
diF/dt = 100 A/μs
20
10
nS
nC
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) R θ JA = 45°C/W when mounted on a
1in 2 pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
P D
b) R θ JA = 96°C/W when mounted
on a minimum pad.
3. Maximum current is calculated as:
R DS(ON)
where P D is maximum power dissipation at T C = 25°C and R DS(on) is at T J(max) and V GS = 10V. Package current limitation is 21A
FDD6612A/FDU6612A Rev. E(W)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD6612A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 30V 30A DPAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 30A, DPAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 30A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; No. of Pins:3 ;RoHS Compliant: Yes |
| FDD6612A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 30V, 30A, TO-252 |
| FDD6612A_F054 | 制造商:Fairchild Semiconductor Corporation 功能描述:DPAK, SINGLE, NCH - Tape and Reel |
| FDD6612A_OLDDI | 制造商:Fairchild 功能描述:DPAK, SINGLE, NCH |
| FDD6630A | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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