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参数资料
| 型号： | FDD6630A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 21A D-PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 21A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 35 毫欧 @ 7.6A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 462pF @ 15V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252 |
| 包装： | 标准包装 |
| 产品目录页面： | 1605 (CN2011-ZH PDF) |
| 其它名称： | FDD6630ADKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Drain-Source Avalanche Ratings
(Note 2)
W DSS
I AR
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Single Pulse, V DD = 15 V
55
7.6
mJ
A
Off Characteristics
BV DSS
? BV DSS
? T J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
30
23
V
mV/ ° C
I DSS
I GSSF
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
V DS = 24 V,
V GS = 20 V,
V GS = 0 V
V DS = 0 V
1
100
μ A
nA
I GSSR
Gate–Body Leakage, Reverse
V GS = –20 V, V DS = 0 V
–100
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
V DS = V GS , I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
1
1.7
–4
3
V
mV/ ° C
R DS(on)
Static Drain–Source
On–Resistance
V GS
V GS
= 10 V, I D = 7.6 A
= 4.5 V, I D = 6.3 A
28
40
35
50
m ?
V GS
= 10 V, I D = 7.6 A, T J = 125 ° C
44
58
I D(on)
On–State Drain Current
V GS
= 10 V,
V DS = 5 V
20
A
g FS
Forward Transconductance
V DS = 5 V,
I D = 7.6 A
13
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 15 V,
f = 1.0 MHz
V GS = 0 V,
462
113
40
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = 15 V,
V GS = 10 V,
V DS = 15 V,
V GS = 5 V
I D = 1 A,
R GEN = 6 ?
I D = 7.6 A,
5
8
17
13
5
2
11
17
28
24
7
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
1.4
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
2.7
A
V SD
Drain–Source Diode Forward
V GS = 0 V, I S = 2.7 A
(Note 2)
0.8
1.2
V
Voltage
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) R θ JA = 40°C/W when mounted on a
1in 2 pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
b) R θ JA = 96°C/W when mounted
on a minimum pad.
3. Maximum current is calculated as:
P D
R DS ( ON )
where P D is maximum power dissipation at T C = 25°C and R DS(on) is at T J(max) and V GS = 10V. Package current limitation is 21A
FDD6630A Rev. D 1
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