- 您现在的位置：买卖IC网 > PDF目录375786 > FDD6682 (FAIRCHILD SEMICONDUCTOR CORP) 30V N-Channel PowerTrench MOSFET PDF资料下载
参数资料
| 型号： | FDD6682 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 75 A, 30 V, 0.0062 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封装： | DPAK-3 |
| 文件页数： | 2/6页 |
| 文件大小： | 121K |
| 代理商： | FDD6682 |
FDD6682/FDU6682 Rev H(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Drain-Source Avalanche Ratings
(Note 2)
W
DSS
Drain-Source Avalanche Energy
I
AR
Drain-Source Avalanche Current
Single Pulse, V
DD
= 15 V, I
D
= 17 A
240
17
mJ
A
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
V
GS
= 0 V,
I
D
= 250
μ
A, Referenced to 25
°
C
I
D
= 250
μ
A
30
V
20
mV/
°
C
V
DS
= 24 V,
V
GS
=
±
20 V,
V
GS
= 0 V
V
DS
= 0 V
1
μ
A
nA
±
100
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
I
D
= 250
μ
A
1
1.9
–7
3
V
mV/
°
C
V
GS
= 10 V,
V
GS
= 4.5 V,
V
GS
= 10 V, I
D
= 17 A, T
J
=125
°
C
V
GS
= 10 V,
V
DS
= 5 V,
I
D
= 17 A
I
D
= 15 A
5.2
6.4
8.0
6.2
8
11.9
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
V
DS
= 5 V
I
D
= 17 A
50
A
S
65
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
2400
577
258
1.4
pF
pF
pF
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
V
GS
= 15 mV,
f = 1.0 MHz
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
14
12
38
18
24
6.5
8.1
20
37
64
32
31
ns
ns
ns
ns
nC
nC
nC
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 15V,
V
GS
= 5 V
I
D
= 17 A,
F
相关PDF资料 |
PDF描述 |
|---|---|
| FDU6688 | 30V N-Channel PowerTrench MOSFET |
| FDD6688 | 30V N-Channel PowerTrench MOSFET |
| FDU6692 | 30V N-Channel PowerTrench MOSFET |
| FDD6692 | 30V N-Channel PowerTrench MOSFET |
| FDU7030BL | 30V N-Channel PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD6682_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDD6685 | 功能描述:MOSFET 30V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD6685 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDD6685_11 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V P-Channel PowerTrench?? MOSFET |
| FDD6688 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。