参数资料
型号: FDD6682
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 75 A, 30 V, 0.0062 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封装: DPAK-3
文件页数: 5/6页
文件大小: 121K
代理商: FDD6682
FDD6682/FDU6682 Rev H(W)
Typical Characteristics
0
2
4
6
8
10
0
10
20
30
40
50
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 17A
V
DS
= 10V
15V
20V
0
500
1000
1500
2000
2500
3000
3500
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
0.01
0.1
1
10
100
1000
0.01
0.1
V
DS
, DRAIN-SOURCE VOLTAGE (V)
1
10
100
I
D
,
DC
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 96
o
C/W
T
A
= 25
o
C
10ms
1ms
100μs
10s
0
20
40
60
80
100
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 96°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 96 °C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
F
相关PDF资料
PDF描述
FDU6688 30V N-Channel PowerTrench MOSFET
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FDU7030BL 30V N-Channel PowerTrench MOSFET
相关代理商/技术参数
参数描述
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