参数资料
型号: FDD6682
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 75 A, 30 V, 0.0062 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封装: DPAK-3
文件页数: 4/6页
文件大小: 121K
代理商: FDD6682
FDD6682/FDU6682 Rev H(W)
Typical Characteristics
0
20
40
60
80
100
0
1
2
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
3.5V
V
GS
=10V
4.0V
3.0V
6.0V
4.5V
0.8
1
1.2
1.4
1.6
1.8
2
0
20
40
60
80
100
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 3.5V
4.0V
4.5V
5.0V
10V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 17A
V
GS
= 10V
0
0.005
0.01
0.015
0.02
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 8.5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
20
40
60
80
1
2
3
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
=125
o
C
25
o
C
V
DS
= 5V
-55
o
C
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
F
相关PDF资料
PDF描述
FDU6688 30V N-Channel PowerTrench MOSFET
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FDU6692 30V N-Channel PowerTrench MOSFET
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相关代理商/技术参数
参数描述
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FDD6685 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDD6685_11 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V P-Channel PowerTrench?? MOSFET
FDD6688 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube